Si3129DV
Vishay Siliconix
www.vishay.com
P-Channel 80 V (D-S) MOSFET
FEATURES
• TrenchFET® power MOSFET
TSOP-6 Single
S
4
• 100 % Rg tested
D
5
• Material categorization:
D
6
for definitions of compliance please see
www.vishay.com/doc?99912
3
G
APPLICATIONS
2
S
D
• Power management for portable
and consumer
1
D
Top View
- Load switches
G
Marking Code: BU
- DC/DC converters
PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = -10 V
-80
D
P-Channel MOSFET
0.0827
0.1242
5.6
RDS(on) max. () at VGS = -4.5 V
Qg typ. (nC)
ID (A) a
-5.4
Configuration
Single
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
TSOP-6 Single
Si3129DV-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
-80
UNIT
Drain-source voltage
Gate-source voltage
VDS
V
VGS
20
TC = 25 °C
-5.4
TC = 70 °C
TA = 25 °C
TA = 70 °C
-4.4
Continuous drain current (TJ = 150 °C)
ID
-3.8 b, c
-3.0 b, c
-20
Pulsed drain current (t = 300 μs)
IDM
IS
A
TC = 25 °C
TA = 25 °C
-3.5
-1.7 b, c
Continuous source-drain diode current
IAS
15
Single pulse avalanche energy
L = 0.1 mH
EAS
11
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
4.2
2.7
Maximum power dissipation
PD
W
2 b, c
1.3 b, c
-55 to 150
Operating junction and storage temperature range
TJ, Tstg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient b, d
SYMBOL
RthJA
RthJF
TYPICAL
MAXIMUM
62.5
UNIT
t 5 s
Steady State
45
25
°C/W
Maximum Junction-to-Foot (Drain)
30
Notes
a. TC = 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 5 s
d. Maximum under steady state conditions is 110 °C/W
S20-0813-Rev. A, 19-Oct-2020
Document Number: 78984
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000