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SI3134KU6 PDF预览

SI3134KU6

更新时间: 2024-11-06 17:01:27
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
6页 1014K
描述
Tape: 5K/Reel;

SI3134KU6 数据手册

 浏览型号SI3134KU6的Datasheet PDF文件第2页浏览型号SI3134KU6的Datasheet PDF文件第3页浏览型号SI3134KU6的Datasheet PDF文件第4页浏览型号SI3134KU6的Datasheet PDF文件第5页浏览型号SI3134KU6的Datasheet PDF文件第6页 
SI3134KU6  
Features  
Trench LV MOSFET Technology  
• ESD Protected Up To 2KV(HBM)  
Moisture Sensitivity Level 1  
Halogen Free. “Green” Device (Note 1)  
N-Channel MOSFET  
• Epoxy Meets UL 94 V-0 Flammability Rating  
• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS  
Compliant. See Ordering Information)  
Maximum Ratings  
• Operating Junction Temperature Range: -55°C to +150°C  
• Storage Temperature Range: -55°C to +150°C  
DFN1010B-6  
• Maximum Thermal Resistance: 300°C/W Junction to Ambient(Note 2)  
Parameter  
Drain-Source Voltage  
Rating  
20  
Unit  
V
Symbol  
VDS  
D
Gate-Source Voltage  
VGS  
±10  
V
TA=25°C  
0.75  
A
E
ID  
Drain Current-Continuous  
A
A3  
TA=100°C  
0.47  
A1  
e
Pulsed Drain Current(Note 3)  
Power Dissipation(Note 4)  
1RWHꢀ  
IDM  
PD  
3
A
e
b
0.42  
W
1
2
3
H
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E2  
7
8
4
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D2  
K
5
6
L
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4 3'ꢁLVꢁEDVHGꢁRQꢁPD[ꢌꢁMXQFWLRQꢁWHPSHUDWXUHꢆꢁXVLQJꢁMXQFWLRQ-ambientꢁWKHUPDOꢁUHVLVWDQFHꢌ  
DIMENSIONS  
INCHES MM  
MIN MAX  
DIM  
NOTE  
MIN  
MAX  
0.40  
0.05  
A
A1  
A3  
b
0.012 0.016 0.31  
0.000 0.002 0.00  
0.005  
0.127  
TYP.  
0.004 0.008 0.10  
0.037 0.041 0.95  
0.037 0.041 0.95  
0.20  
1.05  
1.05  
D
Internal Structure and Marking Code  
E
0.014  
0.350  
e
TYP.  
TYP.  
(6,7)  
D
(3,8)  
D
D2  
E2  
H
0.011 0.015 0.27  
0.010 0.014 0.25  
0.37  
0.35  
0.530  
1,4. Source  
2,5.Gate  
3,6,7,8. Drain  
0.021  
L
0.004 0.008 0.10  
0.20  
-
4K  
K
0.008  
-
0.20  
G,(2)  
G,(5)  
S,(1)  
S,(4)  
PIN1  
Rev.4-1-10192023  
1/6  
MCCSEMI.COM  

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