SI3134KU6
Features
• Trench LV MOSFET Technology
• ESD Protected Up To 2KV(HBM)
• Moisture Sensitivity Level 1
• Halogen Free. “Green” Device (Note 1)
N-Channel MOSFET
• Epoxy Meets UL 94 V-0 Flammability Rating
• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
Maximum Ratings
• Operating Junction Temperature Range: -55°C to +150°C
• Storage Temperature Range: -55°C to +150°C
DFN1010B-6
• Maximum Thermal Resistance: 300°C/W Junction to Ambient(Note 2)
Parameter
Drain-Source Voltage
Rating
20
Unit
V
Symbol
VDS
D
Gate-Source Voltage
VGS
±10
V
TA=25°C
0.75
A
E
ID
Drain Current-Continuous
A
A3
TA=100°C
0.47
A1
e
Pulsed Drain Current(Note 3)
Power Dissipation(Note 4)
1RWHꢀ
IDM
PD
3
A
e
b
0.42
W
1
2
3
H
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E2
7
8
4
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D2
K
5
6
L
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DIMENSIONS
INCHES MM
MIN MAX
DIM
NOTE
MIN
MAX
0.40
0.05
A
A1
A3
b
0.012 0.016 0.31
0.000 0.002 0.00
0.005
0.127
TYP.
0.004 0.008 0.10
0.037 0.041 0.95
0.037 0.041 0.95
0.20
1.05
1.05
D
Internal Structure and Marking Code
E
0.014
0.350
e
TYP.
TYP.
(6,7)
D
(3,8)
D
D2
E2
H
0.011 0.015 0.27
0.010 0.014 0.25
0.37
0.35
0.530
1,4. Source
2,5.Gate
3,6,7,8. Drain
0.021
L
0.004 0.008 0.10
0.20
-
4K
K
0.008
-
0.20
G,(2)
G,(5)
S,(1)
S,(4)
PIN1
Rev.4-1-10192023
1/6
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