SI3139KL3B
P-Channel MOSFET
DFN1006-3
Features
• Operated at Low Logic Level Gate Drive
• P-Channel Switch with Low RDS(on)
• Epoxy Meets UL 94 V-0 Flammability Rating
• ESD Protected up to 2KV(HBM)
• Moisture Sensitivity Level 1
• Halogen Free. “Green” Device (Note 1)
• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
Maximum Ratings
• Operating Junction Temperature Range: -55°C to +150°C
• Storage Temperature Range: -55°C to +150°C
• Maximum Thermal Resistance: 381°C/W Junction to Ambient(Note 2)
Parameter
Drain-Source Voltage
Rating
-20
Unit
V
Symbol
VDS
D
A
1
Gate-Source Voltage
VGS
±12
V
C
E
TA=25°C
-0.65
2
A1
ID
A
3
Drain Current-Continuous
TA=100°C
-0.41
-2
e
L1
Pulsed Drain Current(Note 3)
Power Dissipation(Note 4)
Note:
IDM
PD
A
b1
1
328
mW
b
E1
2
3
1. Halogen free "Green” products are defined as those which contain <900ppm bromine,
L
L1
L
<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
DIMENSIONS
MM
MIN MAX MIN MAX
2. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based
on RθJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in
any given application depends on the user's specific board design.
INCHES
DIM
A
NOTE
0.017 0.022 0.42 0.55
A1 0.000 0.002 0.00 0.05
0.018 0.022 0.45 0.55
b1 0.004 0.008 0.10 0.20
3. Repetitive rating; pulse width limited by max. junction temperature.
b
4. PD is based on max. junction temperature, using junction-case thermal resistance.
c
D
E
0.005 0.007 0.12 0.18
0.037 0.041 0.95 1.05
0.022 0.026 0.55 0.65
E1 0.006 0.010 0.15 0.25
Internal Structure and Marking Code
0.026
0.008 0.012 0.20 0.30
0.0002 0.05
0.65
TYP.
TYP.
e
L
L1
D
Pin1
1. GATE
2. SOURCE
Suggested Solder Pad Layout
Pin3
9A
3. DRAIN
G
(mm)
Pin2
0.50
0.50
S
0.25
0.65
0.20
0.25
Rev.4-1-04172023
1/6
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