Datasheet > SI3136K

SI3136K

更新时间： 2024-11-18 18:09:31

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
6页	767K
描述
Tape&Reel:3Kpcs/Reel;

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中文翻译

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数据手册

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SI3136K 数据手册

SI3136K

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Trench LV MOSFET Technology

ESD Protected Up To 2KV (HBM)

Moisture Sensitivity Level 1

Halogen Free. “Green” Device ^{(Note 1)}

Epoxy Meets UL 94 V-0 Flammability Rating

Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS

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Compliant. See Ordering Information)

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• Operating Junction Temperature Range: -55°C to +150°C

• Storage Temperature Range: -55°C to +150°C

• Thermal Resistance: 130°C/W Junction to Ambient^{(Note 2)}

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Parameter

Drain-Source Voltage

Rating

Symbol

V_DS

Unit

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Gate-Source Volltage

V_GS

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T_A=25°C

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Continuous Drain Current

Pulsed Drain Current^{(Note 3)}

I_D

T_A=100°C

0.51

3.2

I_DM

P_D

Total Power Dissipation^{（Note 4）}

0.96

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Note:

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1. Halogen free "Green” products are defined as those which contain <900ppm bromine,

<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

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2. The value of R_θJAis measured with the device mounted on the minimum recommended

pad size, in a still air environment with T_A=25°C.

3. Repetitive rating; pulse width limited by max. junction temperature.

4. P_Dis based on max. junction temperature, using junction-ambient thermal resistance.

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中文翻译

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