Datasheet > SI3139KL3C

SI3139KL3C

更新时间： 2024-11-19 17:01:11

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
6页	2495K
描述
Tape&Reel: 10Kpcs/Reel;

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中文翻译

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数据手册

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SI3139KL3C 数据手册

SI3139KL3C

Features

• Trench LV MOSFET Technology

• ESD Protected Up To 2KV(HBM)

• Moisture Sensitivity Level 1

• Halogen Free. “Green” Device ^{(Note 1)}

P-Channel MOSFET

• Epoxy Meets UL 94 V-0 Flammability Rating

• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS

Compliant. See Ordering Information)

Maximum Ratings

•

Operating Junction Temperature Range: -55°C to +150°C

•

Storage Temperature Range: -55°C to +150°C

•

Maximum Thermal Resistance: 140°C/W Junction to Ambient^(Note2)

DFN1006-3A

Parameter

Drain-Source Voltage

Rating

-20

Unit

Symbol

V_DS

Gate-Source Voltage

V_GS

±12

T_a=25°C

-0.5

-0.3

I_D

Drain Current-Continuous

T_a=100°C

Pulsed Drain Current^(Note3)

I_DM

P_D

-2

Power Dissipation^(Note4)

0.9

1RWHꢀ

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ꢍꢂ 7KHꢃYDOXHꢃRIꢃ5_ș-$ꢃLVꢃPHDVXUHGꢃZLWKꢃWKHꢃGHYLFHꢃPRXQWHGꢃRQꢃꢁLQ^ꢍꢃ)5ꢎꢏꢃERDUGꢃZLWKꢃꢍR]ꢂ

DIMENSIONS

MIN MAX MIN MAX

0.013 0.016 0.34 0.40

INCHES

DIM

NOTE

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4ꢂ 3_'ꢃLVꢃEDVHGꢃRQꢃPD[ꢂꢃMXQFWLRQꢃWHPSHUDWXUHꢈꢃXVLQJꢃMXQFWLRQ to ambientꢃWKHUPDOꢃUHVLVWDQFHꢂ

A1 0.000 0.002 0.00 0.05

0.018 0.022 0.45 0.55

b1 0.004 0.008 0.10 0.20

0.037 0.042 0.95 1.075

0.022 0.026 0.55 0.675

E1 0.006 0.010 0.15 0.25

0.026

0.008 0.012 0.20 0.30

0.0002 0.05

0.65

TYP.

Internal Structure and Marking Code

Suggested Solder Pad Layout

Pin1

1. GATE

2. SOURCE

(mm)

Pin3

3. DRAIN

0.50

Pin2

0.25

0.65

0.20

0.25

Rev.4-1-08012023

1/6

MCCSEMI.COM

12 3 4 5 6

中文翻译

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