型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SG2012-3.3XKC3R/TR | SGMICRO |
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400mA , Low Power, Low Dropout, Linear Regulators | |
SG2012J | MICROSEMI |
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Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon, HERMETI | |
SG2012J/883B | MICROSEMI |
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Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon, HERMETI | |
SG2012J/DESC | MICROSEMI |
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Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon, | |
SG2012L | MICROSEMI |
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Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon, HERMETI | |
SG2012L/883B | MICROSEMI |
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Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon, HERMETI | |
SG2013 | MICROSEMI |
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HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS | |
SG2013 | MICROCHIP |
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The SG2000 series integrates seven NPN Darlington pairs with internal suppression diodes t | |
SG2013J | MICROSEMI |
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Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon, HERMETI | |
SG2013J/883B | MICROSEMI |
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Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon, HERMETI |