是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | CHIP CARRIER, S-CQCC-N20 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
风险等级: | 5.82 | 最大集电极电流 (IC): | 0.5 A |
集电极-发射极最大电压: | 95 V | 配置: | 7 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
最小直流电流增益 (hFE): | 1000 | JESD-30 代码: | S-CQCC-N20 |
JESD-609代码: | e0 | 元件数量: | 7 |
端子数量: | 20 | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | SQUARE | 封装形式: | CHIP CARRIER |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | NO LEAD |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
VCEsat-Max: | 1.6 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SG2022J | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 95V V(BR)CEO, 7-Element, NPN, Silicon, | |
SG2022J/883B | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 95V V(BR)CEO, 7-Element, NPN, Silicon, | |
SG2022L | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 95V V(BR)CEO, 7-Element, NPN, Silicon, | |
SG2022L/883B | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 95V V(BR)CEO, 7-Element, NPN, Silicon, | |
SG2023 | MICROSEMI |
获取价格 |
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS | |
SG2023 | MICROCHIP |
获取价格 |
The SG2000 series integrates seven NPN Darlington pairs with internal suppression diodes t | |
SG2023DW | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor | |
SG2023J | MICROSEMI |
获取价格 |
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS | |
SG2023J/883B | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 95V V(BR)CEO, 7-Element, NPN, Silicon, HERMETI | |
SG2023J/DESC | MICROSEMI |
获取价格 |
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS |