Datasheet > SG2013J

SG2013J

更新时间： 2024-12-02 07:45:19

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
10页	435K
描述
Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon, HERMETIC SEALED, CERAMIC PACKAGE-16

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SG2013J 数据手册

SG2000

HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS

Features

Description

The SG2000 series integrates seven NPN Darlington

pairs with internal suppression diodes to drive lamps,

relays, and solenoids in many military, aerospace, and

industrial applications that require severe environments.

All units feature open collector outputs with greater than

50V breakdown voltages combined with 500mA current

carrying capabilities.

Seven NPN Darlington Pairs

-55°C to 125°C Ambient Operating Temperature Range

Collector Currents to 600mA

Output Voltages from 50V to 95V

. Internal Clamping Diodes for Inductive Loads

DTL, TTL, PMOS, or CMOS Compatible Inputs

Hermetic Ceramic Package

Five different input configurations provide optimized

designs for interfacing with DTL, TTL, PMOS, or CMOS

drive signals. These devices are designed to operate

from -55°C to 125°C ambient temperature in a 16 pin

dual in line ceramic (J) package and 20 pin Leadless

Chip Carrier (LCC). The plastic SOIC (DW) is

designed to operate over the commercial temperature

range of 0°C to 70°C.

High Reliability Features

Following are the high reliability features of SG2000 series:

Available To MIL-STD-883 – 883, ¶ 1.2.1

Available to DSCC

Standard Microcircuit Drawing (SMD)

. MIL-M38510/14101BEA - SG2001J-JAN

MIL-M38510/14102BEA - SG2002J-JAN

MIL-M38510/14103BEA - SG2003J-JAN

MIL-M38510/14104BEA - SG2004J-JAN

MSC-AMS Level "S" Processing Available

Partial Schematics

Figure 1 · Partial Schematics

December 2014 Rev. 1.4

www.microsemi.com

12 3 4 5 6 7...10

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