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SFF9244 PDF预览

SFF9244

更新时间: 2024-10-31 22:22:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
7页 206K
描述
Advanced Power MOSFET

SFF9244 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-3PF包装说明:TO-3PF, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.38
雪崩能效等级(Eas):450 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:250 V
最大漏极电流 (Abs) (ID):6 A最大漏极电流 (ID):6 A
最大漏源导通电阻:0.8 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):60 W
最大脉冲漏极电流 (IDM):24 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SFF9244 数据手册

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SFF9244  
Advanced Power MOSFET  
FEATURES  
BVDSS = -250 V  
RDS(on) = 0.8   
ID = -6.0 A  
! Avalanche Rugged Technology  
! Rugged Gate Oxide Technology  
! Lower Input Capacitance  
! Improved Gate Charge  
! Extended Safe Operating Area  
! Lower Leakage Current : 10 µA (Max.) @ VDS = -250V  
! Lower RDS(ON) : 0.549 (Typ.)  
TO-3PF  
1
2
3
1.Gate 2. Drain 3. Source  
Absolute Maximum Ratings  
Symbol  
Characteristic  
Value  
-250  
-6.0  
-4.1  
24  
Units  
VDSS  
Drain-to-Source Voltage  
V
Continuous Drain Current (TC=25oC)  
Continuous Drain Current (TC=100oC)  
Drain Current-Pulsed  
ID  
A
1
IDM  
VGS  
EAS  
IAR  
A
V
O
+
_
30  
Gate-to-Source Voltage  
2
Single Pulsed Avalanche Energy  
Avalanche Current  
450  
-6.0  
6.0  
mJ  
A
O
1
O
1
EAR  
dv/dt  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Total Power Dissipation (TC=25oC)  
Linear Derating Factor  
mJ  
V/ns  
W
O
3
-4.8  
60  
O
PD  
TJ , TSTG  
TL  
0.48  
W/oC  
Operating Junction and  
- 55 to +150  
300  
Storage Temperature Range  
Maximum Lead Temp. for Soldering  
oC  
Purposes, 1/8 ” from case for 5-seconds  
Thermal Resistance  
Symbol  
Characteristic  
Typ.  
Max.  
Units  
RθJC  
Junction-to-Case  
--  
--  
2.08  
40  
oC/W  
RθJA  
Junction-to-Ambient  
Rev. A  

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