Datasheet > SFF9250L

SFF9250L

更新时间： 2024-10-31 22:22:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
7页	547K
描述
Advanced Power MOSFET

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SFF9250L 数据手册

Advanced Power MOSFET

SFF9250L

FEATURES

BV_DSS= -200 V

R_DS(on)= 0.23 Ω

I_D= -12.6 A

❑ Logic-Level Gate Drive

❑ Avalanche Rugged Technology

❑ Rugged Gate Oxide Technology

❑ Lower Input Capacitances

❑ Improved Gate Charge

❑ Extended Safe Operating Area

❑ Lower Leakage Current : 10uA (Max.) @ V_DS=-200V

❑ Lower R_DS(ON): 0.175 Ω (Typ.)

TO-3PF

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Drain-to-Source Voltage

Value

-200

-12.6

-7.9

Units

V_DSS

Continuous Drain Current (T_C=25 °C)

Continuous Drain Current (T_C=100 °C)

Drain Current-Pulsed

I_D

①

I_DM

V_GS

E_AS

I_AR

-50.4

±20

990

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

②

①

③

-12.6

20.4

-5.0

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation (T_C=25 °C)

Linear Derating Factor

E_AR

dv/dt

V/ns

P_D

T_J, T_STG

T_L

0.72

W/ °C

Operating Junction and

- 55 to +150

300

Storage Temperature Range

Maximum Lead Temp. for Soldering

°C

Purposes, 1/8″ from case for 5-seconds

Thermal Resistance

Symbol

Characteristic

Junction-to-Case

Junction-to-Ambient

Typ.

Max.

Units

R_θJC

0.61

°C /W

R_θJA

Rev. A

12 3 4 5 6 7

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