生命周期: | Active | 包装说明: | FLANGE MOUNT, R-XSFM-P6 |
Reach Compliance Code: | compliant | 风险等级: | 5.76 |
最小漏源击穿电压: | 400 V | 最大漏极电流 (Abs) (ID): | 10 A |
最大漏极电流 (ID): | 10 A | 最大漏源导通电阻: | 0.55 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-XSFM-P6 |
元件数量: | 1 | 端子数量: | 6 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 表面贴装: | NO |
端子形式: | PIN/PEG | 端子位置: | SINGLE |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SFF340V | SSDI |
获取价格 |
Transistor | |
SFF340Z | SSDI |
获取价格 |
10 AMP 400Volts 0.55OHM N-Channel POWER MOSFET | |
SFF340ZGZ | SSDI |
获取价格 |
Transistor | |
SFF350MGZ | SSDI |
获取价格 |
Transistor | |
SFF35N20M | SSDI |
获取价格 |
55 AMP (note 1) /200 Volts 35 mO N-Channel Trench Gate MOSFET | |
SFF35N20Z | SSDI |
获取价格 |
55 AMP (note 1) /200 Volts 35 mO N-Channel Trench Gate MOSFET | |
SFF3810E | SSDI |
获取价格 |
Power Field-Effect Transistor, 60A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Met | |
SFF3810ES | SSDI |
获取价格 |
Power Field-Effect Transistor, 60A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Met | |
SFF3810ETX | SSDI |
获取价格 |
Power Field-Effect Transistor, 60A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Met | |
SFF3810ETXV | SSDI |
获取价格 |
Power Field-Effect Transistor, 60A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Met |