Datasheet > SEMIX452GB176HDS_11

SEMIX452GB176HDS_11

更新时间： 2024-11-19 11:57:15

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
5页	672K
描述
Trench IGBT Modules

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SEMIX452GB176HDS_11 数据手册

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SEMiX452GB176HDs

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

IGBT

V_CES

I_C

1700

437

310

300

600

T_c= 25 °C

T_c= 80 °C

T_j= 150 °C

I_Cnom

I_CRM

V_GES

I_CRM= 2xI_Cnom

V_CC= 1000 V

-20 ... 20

SEMiX^®2s

Trench IGBT Modules

SEMiX452GB176HDs

Features

_GE≤ 20 V

_CES≤ 1700 V

T_j= 125 °C

t_psc

µs

°C

T_j

-55 ... 150

Inverse diode

T_c= 25 °C

T_c= 80 °C

I_F

389

262

300

T_j= 150 °C

I_Fnom

I_FRM

I_FSM

T_j

I_FRM= 2xI_Fnom

t_p= 10 ms, sin 180°, T_j= 25 °C

600

2000

-40 ... 150

• Homogeneous Si

°C

• Trench = Trenchgate technology

• V_CE(sat)with positive temperature

coefficient

Module

I_t(RMS)

T_stg

T_terminal= 80 °C

600

-40 ... 125

4000

°C

• UL recognised file no. E63532

V_isol

AC sinus 50Hz, t = 1 min

Typical Applications*

• AC inverter drives

• UPS

• Electronic welders

Characteristics

Symbol Conditions

IGBT

min.

typ.

max.

Unit

I_C= 300 A

T_j= 25 °C

V_CE(sat)

2.45

2.9

_GE= 15 V

T_j= 125 °C

2.5

chiplevel

T_j= 25 °C

T_j= 125 °C

T_j= 25 °C

T_j= 125 °C

V_CE0

r_CE

1.2

1.1

4.2

6.0

6.4

m



0.9

3.3

5.2

5.8

0.1

V_GE= 15 V

V_GE(th)

I_CES

V_GE=V_CE, I_C= 12 mA

T_j= 25 °C

5.2

V_GE= 0 V

_CE= 1700 V

T_j= 125 °C

f = 1 MHz

C_ies

C_oes

C_res

Q_G

R_Gint

t_d(on)

t_r

E_on

t_d(off)

t_f

26.4

1.10

0.88

2800

2.50

340

180

900

105

V_CE= 25 V

_GE= 0 V

V_GE= - 8 V...+ 15 V

T_j= 25 °C

V_CC= 1200 V

T_j= 125 °C

_C= 300 A

_GE= ±15 V

_{G on}= 4 

_{G off}= 4 

T_j= 125 °C

E_off

110

R_th(j-c)

per IGBT

0.073

K/W

Rev. 2 – 23.03.2011

12 3 4 5

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