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SEMiX453GB12E4I33p PDF预览

SEMiX453GB12E4I33p

更新时间: 2024-11-06 14:55:39
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 双极性晶体管
页数 文件大小 规格书
6页 655K
描述
IGBT Modules SEMiX 3p shunt (150x62x17)

SEMiX453GB12E4I33p 数据手册

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SEMiX453GB12E4I33p  
Absolute Maximum Ratings  
Symbol Conditions  
IGBT  
Values  
Unit  
Tj = 25 °C  
VCES  
IC  
1200  
678  
521  
450  
1350  
-20 ... 20  
V
A
A
A
A
V
Tc = 25 °C  
Tc = 80 °C  
Tj = 175 °C  
ICnom  
ICRM  
VGES  
ICRM = 3 x ICnom  
VCC = 800 V  
SEMiX® 3p shunt  
Trench IGBT Modules  
SEMiX453GB12E4I33p  
Features*  
V
V
GE 15 V  
CES 1200 V  
Tj = 150 °C  
tpsc  
10  
µs  
°C  
Tj  
-40 ... 175  
Inverse diode  
Tj = 25 °C  
VRRM  
IF  
1200  
578  
433  
450  
900  
V
A
A
A
A
Tc = 25 °C  
Tc = 80 °C  
Tj = 175 °C  
IFnom  
IFRM  
IFSM  
Tj  
IFRM = 2xIFnom  
tp = 10 ms, sin 180°, Tj = 25 °C  
• Homogeneous Si  
2430  
-40 ... 175  
A
°C  
• Trench = Trenchgate technology  
• VCE(sat) with positive temperature  
coefficient  
• High short circuit capability  
• Press-fit pins as auxiliary contacts  
• Current sensing shunt resistor  
• UL recognized, file no. E63532  
Module  
It(RMS)  
Tstg  
Tc = 80°C  
module without TIM  
AC sinus 50Hz, t = 1 min  
600  
-40 ... 125  
4000  
A
°C  
V
Visol  
Typical Applications  
Characteristics  
• AC inverter drives  
• UPS  
Symbol Conditions  
IGBT  
min.  
typ.  
max.  
Unit  
• Renewable energy systems  
IC = 450 A  
Tj = 25 °C  
VCE(sat)  
1.80  
2.19  
2.05  
2.40  
V
V
Remarks  
V
GE = 15 V  
Tj = 150 °C  
• Product reliability results are valid for  
Tj=150°C  
chiplevel  
Tj = 25 °C  
Tj = 150 °C  
Tj = 25 °C  
Tj = 150 °C  
VCE0  
rCE  
0.80  
0.70  
2.2  
3.3  
5.8  
0.90  
0.80  
2.6  
3.6  
6.5  
5
V
V
mΩ  
mΩ  
V
mA  
nF  
nF  
nF  
nC  
Ω
ns  
ns  
mJ  
ns  
ns  
• Visol between temperature sensor and  
power section is only 2500V  
• For storage and case temperature with  
TIM see document “TP(*) SEMiX 3p”  
chiplevel  
VGE = 15 V  
chiplevel  
VGE(th)  
ICES  
Cies  
Coes  
Cres  
QG  
RGint  
td(on)  
tr  
VGE = VCE, IC = 18 mA  
VGE = 0 V, VCE = 1200 V, Tj = 25 °C  
f = 1 MHz  
5
27.9  
1.74  
1.53  
2550  
1.7  
195  
67  
33  
VCE = 25 V  
f = 1 MHz  
f = 1 MHz  
V
GE = 0 V  
VGE = - 8 V...+ 15 V  
Tj = 25 °C  
VCC = 600 V  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
I
C = 450 A  
V
GE = +15/-15 V  
Eon  
td(off)  
tf  
R
R
G on = 1.1 Ω  
G off = 1.1 Ω  
505  
110  
di/dton = 6600 A/µs  
di/dtoff = 3400 A/µs  
dv/dt = 4800 V/µs  
Ls = 21 nH  
Tj = 150 °C  
Eoff  
57  
mJ  
Rth(j-c)  
Rth(c-s)  
per IGBT  
per IGBT (λgrease=0.81 W/(m*K))  
0.066  
K/W  
K/W  
0.03  
per IGBT, pre-applied phase change  
material  
Rth(c-s)  
0.021  
K/W  
GB + shunt  
© by SEMIKRON  
Rev. 1.0 – 28.02.2020  
1

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