SEMiX453GB12E4I33p
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Unit
Tj = 25 °C
VCES
IC
1200
678
521
450
1350
-20 ... 20
V
A
A
A
A
V
Tc = 25 °C
Tc = 80 °C
Tj = 175 °C
ICnom
ICRM
VGES
ICRM = 3 x ICnom
VCC = 800 V
SEMiX® 3p shunt
Trench IGBT Modules
SEMiX453GB12E4I33p
Features*
V
V
GE ≤ 15 V
CES ≤ 1200 V
Tj = 150 °C
tpsc
10
µs
°C
Tj
-40 ... 175
Inverse diode
Tj = 25 °C
VRRM
IF
1200
578
433
450
900
V
A
A
A
A
Tc = 25 °C
Tc = 80 °C
Tj = 175 °C
IFnom
IFRM
IFSM
Tj
IFRM = 2xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
• Homogeneous Si
2430
-40 ... 175
A
°C
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• Press-fit pins as auxiliary contacts
• Current sensing shunt resistor
• UL recognized, file no. E63532
Module
It(RMS)
Tstg
Tc = 80°C
module without TIM
AC sinus 50Hz, t = 1 min
600
-40 ... 125
4000
A
°C
V
Visol
Typical Applications
Characteristics
• AC inverter drives
• UPS
Symbol Conditions
IGBT
min.
typ.
max.
Unit
• Renewable energy systems
IC = 450 A
Tj = 25 °C
VCE(sat)
1.80
2.19
2.05
2.40
V
V
Remarks
V
GE = 15 V
Tj = 150 °C
• Product reliability results are valid for
Tj=150°C
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCE0
rCE
0.80
0.70
2.2
3.3
5.8
0.90
0.80
2.6
3.6
6.5
5
V
V
mΩ
mΩ
V
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
• Visol between temperature sensor and
power section is only 2500V
• For storage and case temperature with
TIM see document “TP(*) SEMiX 3p”
chiplevel
VGE = 15 V
chiplevel
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
VGE = VCE, IC = 18 mA
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
f = 1 MHz
5
27.9
1.74
1.53
2550
1.7
195
67
33
VCE = 25 V
f = 1 MHz
f = 1 MHz
V
GE = 0 V
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
I
C = 450 A
V
GE = +15/-15 V
Eon
td(off)
tf
R
R
G on = 1.1 Ω
G off = 1.1 Ω
505
110
di/dton = 6600 A/µs
di/dtoff = 3400 A/µs
dv/dt = 4800 V/µs
Ls = 21 nH
Tj = 150 °C
Eoff
57
mJ
Rth(j-c)
Rth(c-s)
per IGBT
per IGBT (λgrease=0.81 W/(m*K))
0.066
K/W
K/W
0.03
per IGBT, pre-applied phase change
material
Rth(c-s)
0.021
K/W
GB + shunt
© by SEMIKRON
Rev. 1.0 – 28.02.2020
1