Datasheet > SEMIX453GAL12E4S_10

SEMIX453GAL12E4S_10

更新时间： 2024-11-19 09:29:19

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
5页	346K
描述
Trench IGBT Modules

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SEMIX453GAL12E4S_10 数据手册

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SEMiX453GAL12E4s

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

IGBT

V_CES

1200

683

T_c= 25 °C

T_c= 80 °C

I_C

T_j= 175 °C

526

I_Cnom

450

I_CRM

I_CRM= 3xI_Cnom

1350

-20 ... 20

V_GES

t_psc

T_j

SEMiX^®3s

Trench IGBT Modules

SEMiX453GAL12E4s

Features

V_CC= 800 V

V_GE≤ 20 V

V_CES≤ 1200 V

T_j= 150 °C

µs

°C

-40 ... 175

Inverse diode

T_c= 25 °C

T_c= 80 °C

I_F

544

407

T_j= 175 °C

I_Fnom

I_FRM

I_FSM

T_j

450

I_FRM= 3xI_Fnom

t_p= 10 ms, sin 180°, T_j= 25 °C

1350

2430

• Homogeneous Si

-40 ... 175

°C

• Trench = Trenchgate technology

• V_CE(sat)with positive temperature

coefficient

• High short circuit capability

• UL recognized, file no. E63532

Freewheeling diode

T_c= 25 °C

T_c= 80 °C

I_F

544

407

T_j= 175 °C

I_Fnom

450

Typical Applications*

• AC inverter drives

• UPS

I_FRM

I_FSM

T_j

I_FRM= 3xI_Fnom

t_p= 10 ms, sin 180°, T_j= 25 °C

1350

2430

-40 ... 175

°C

• Electronic Welding

Module

I_t(RMS)

T_stg

Remarks

• Case temperature limited to T_C=125°C

max.

• Product reliability results are valid for

T_j=150°C

600

-40 ... 125

4000

°C

V_isol

AC sinus 50Hz, t = 1 min

Characteristics

• Dynamic values apply to the

following combination of resistors:

Symbol Conditions

IGBT

min.

typ.

max.

Unit

_Gon,main= 1,0 Ω

_Goff,main= 1,0 Ω

_G,X= 2,2 Ω

I_C= 450 A

V_CE(sat)

T_j= 25 °C

1.8

2.2

2.05

2.4

_GE= 15 V

_E,X= 0,5 Ω

T_j= 150 °C

chiplevel

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

0.8

0.7

2.2

3.3

5.8

0.1

0.9

0.8

2.6

3.6

6.5

0.3

mΩ

V_GE= 15 V

V_GE(th)

I_CES

V_GE=V_CE, I_C= 18 mA

T_j= 25 °C

Ω

V_GE= 0 V

_CE= 1200 V

T_j= 150 °C

f = 1 MHz

C_ies

C_oes

C_res

Q_G

27.9

1.74

1.53

2550

1.67

V_CE= 25 V

_GE= 0 V

V_GE= - 8 V...+ 15 V

T_j= 25 °C

R_Gint

GAL

Rev. 0 – 05.05.2010

12 3 4 5

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