SEMiX453GB17E4s
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Unit
Tj = 25 °C
VCES
IC
1700
762
579
450
1350
-20 ... 20
V
A
A
A
A
V
Tc = 25 °C
Tc = 80 °C
Tj = 175 °C
ICnom
ICRM
VGES
ICRM = 3xICnom
SEMiX® 3s
VCC = 1000 V
VGE ≤ 15 V
VCES ≤ 1700 V
Tj = 150 °C
tpsc
10
µs
°C
Tj
-40 ... 175
Inverse diode
Tj = 25 °C
VRRM
IF
1700
482
354
450
900
V
A
A
A
A
SEMiX453GB17E4s
Features
Tc = 25 °C
Tc = 80 °C
Tj = 175 °C
IFnom
IFRM
IFSM
Tj
IFRM = 2xIFnom
ꢀ Homogeneous Si
tp = 10 ms, sin 180°, Tj = 25 °C
AC sinus 50Hz, t = 1 min
2565
-40 ... 175
A
°C
ꢀ Trench = Trenchgate technology
ꢀ VCE(sat) with positive temperature
coefficient
ꢀ High short circuit capability
ꢀ UL recognized, file no. E63532
Module
It(RMS)
Tstg
600
-40 ... 125
4000
A
°C
V
Typical Applications*
Visol
ꢀ AC inverter drives
ꢀ UPS
Characteristics
ꢀ Electronic Welding
Symbol Conditions
IGBT
min.
typ.
max.
Unit
Remarks
ꢀ Case temperature limited to TC=125°C
max.
IC = 450 A
Tj = 25 °C
VCE(sat)
1.90
2.26
2.20
2.45
V
V
V
GE = 15 V
Tj = 150 °C
ꢀ Product reliability results are valid for
Tj=150°C
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCE0
rCE
1.1
1
1.8
2.8
5.8
1.2
1.1
2.2
3
6.4
5
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
ꢀ Dynamic values apply to the
following combination of resistors:
chiplevel
R
R
R
R
Gon,main = 2,4 Ω
Goff,main = 2,4 Ω
G,X = 2,2 Ω
VGE = 15 V
chiplevel
VGE(th)
ICES
VGE=VCE, IC = 18 mA
Tj = 25 °C
V
5.2
E,X = 0,5 Ω
VGE = 0 V
CE = 1700 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
36
1.50
1.14
3600
1.67
455
65
250
960
170
VCE = 25 V
GE = 0 V
V
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 1200 V
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
ns
I
C = 450 A
ns
mJ
ns
V
GE = +15/-15 V
R
R
G on = 3.3 Ω
G off = 3.3 Ω
di/dton = 7000 A/µs
di/dtoff = 2220 A/µs
du/dt = 5160 V/µs
Ls = 30 nH
ns
Tj = 150 °C
Eoff
190
mJ
GB
© by SEMIKRON
Rev. 3 – 20.02.2015
1