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SEMiX453GB17E4s PDF预览

SEMiX453GB17E4s

更新时间: 2024-11-20 14:55:27
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赛米控丹佛斯 - SEMIKRON 双极性晶体管
页数 文件大小 规格书
5页 289K
描述
IGBT Modules SEMiX 3s (150x64x17)

SEMiX453GB17E4s 数据手册

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SEMiX453GB17E4s  
Absolute Maximum Ratings  
Symbol Conditions  
IGBT  
Values  
Unit  
Tj = 25 °C  
VCES  
IC  
1700  
762  
579  
450  
1350  
-20 ... 20  
V
A
A
A
A
V
Tc = 25 °C  
Tc = 80 °C  
Tj = 175 °C  
ICnom  
ICRM  
VGES  
ICRM = 3xICnom  
SEMiX® 3s  
VCC = 1000 V  
VGE 15 V  
VCES 1700 V  
Tj = 150 °C  
tpsc  
10  
µs  
°C  
Tj  
-40 ... 175  
Inverse diode  
Tj = 25 °C  
VRRM  
IF  
1700  
482  
354  
450  
900  
V
A
A
A
A
SEMiX453GB17E4s  
Features  
Tc = 25 °C  
Tc = 80 °C  
Tj = 175 °C  
IFnom  
IFRM  
IFSM  
Tj  
IFRM = 2xIFnom  
ꢀ Homogeneous Si  
tp = 10 ms, sin 180°, Tj = 25 °C  
AC sinus 50Hz, t = 1 min  
2565  
-40 ... 175  
A
°C  
ꢀ Trench = Trenchgate technology  
ꢀ VCE(sat) with positive temperature  
coefficient  
ꢀ High short circuit capability  
ꢀ UL recognized, file no. E63532  
Module  
It(RMS)  
Tstg  
600  
-40 ... 125  
4000  
A
°C  
V
Typical Applications*  
Visol  
ꢀ AC inverter drives  
ꢀ UPS  
Characteristics  
ꢀ Electronic Welding  
Symbol Conditions  
IGBT  
min.  
typ.  
max.  
Unit  
Remarks  
ꢀ Case temperature limited to TC=125°C  
max.  
IC = 450 A  
Tj = 25 °C  
VCE(sat)  
1.90  
2.26  
2.20  
2.45  
V
V
V
GE = 15 V  
Tj = 150 °C  
ꢀ Product reliability results are valid for  
Tj=150°C  
chiplevel  
Tj = 25 °C  
Tj = 150 °C  
Tj = 25 °C  
Tj = 150 °C  
VCE0  
rCE  
1.1  
1
1.8  
2.8  
5.8  
1.2  
1.1  
2.2  
3
6.4  
5
V
V
m  
mΩ  
V
mA  
mA  
nF  
nF  
nF  
nC  
ꢀ Dynamic values apply to the  
following combination of resistors:  
chiplevel  
R
R
R
R
Gon,main = 2,4 Ω  
Goff,main = 2,4 Ω  
G,X = 2,2 Ω  
VGE = 15 V  
chiplevel  
VGE(th)  
ICES  
VGE=VCE, IC = 18 mA  
Tj = 25 °C  
V
5.2  
E,X = 0,5 Ω  
VGE = 0 V  
CE = 1700 V  
f = 1 MHz  
f = 1 MHz  
f = 1 MHz  
Cies  
Coes  
Cres  
QG  
RGint  
td(on)  
tr  
Eon  
td(off)  
tf  
36  
1.50  
1.14  
3600  
1.67  
455  
65  
250  
960  
170  
VCE = 25 V  
GE = 0 V  
V
VGE = - 8 V...+ 15 V  
Tj = 25 °C  
VCC = 1200 V  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
ns  
I
C = 450 A  
ns  
mJ  
ns  
V
GE = +15/-15 V  
R
R
G on = 3.3 Ω  
G off = 3.3 Ω  
di/dton = 7000 A/µs  
di/dtoff = 2220 A/µs  
du/dt = 5160 V/µs  
Ls = 30 nH  
ns  
Tj = 150 °C  
Eoff  
190  
mJ  
GB  
© by SEMIKRON  
Rev. 3 – 20.02.2015  
1

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