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SEMiX453GB17E4Ip PDF预览

SEMiX453GB17E4Ip

更新时间: 2024-11-06 14:54:55
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 双极性晶体管
页数 文件大小 规格书
6页 665K
描述
IGBT Modules SEMiX 3p shunt (150x62x17)

SEMiX453GB17E4Ip 数据手册

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SEMiX453GB17E4Ip  
Absolute Maximum Ratings  
Symbol Conditions  
IGBT  
Values  
Unit  
Tj = 25 °C  
VCES  
IC  
1700  
731  
555  
450  
1350  
-20 ... 20  
V
A
A
A
A
V
Tc = 25 °C  
Tc = 80 °C  
Tj = 175 °C  
ICnom  
ICRM  
VGES  
ICRM = 3xICnom  
VCC = 1000 V  
SEMiX® 3p shunt  
V
V
GE 15 V  
CES 1700 V  
Tj = 150 °C  
tpsc  
10  
µs  
°C  
Tj  
-40 ... 175  
Inverse diode  
Tj = 25 °C  
VRRM  
IF  
1700  
557  
412  
450  
900  
V
A
A
A
A
SEMiX453GB17E4Ip  
Features  
Tc = 25 °C  
Tc = 80 °C  
Tj = 175 °C  
IFnom  
IFRM  
IFSM  
Tj  
IFRM = 2xIFnom  
tp = 10 ms, sin 180°, Tj = 25 °C  
• Homogeneous Si  
2565  
-40 ... 175  
A
°C  
• Trench = Trenchgate technology  
• VCE(sat) with positive temperature  
coefficient  
• High short circuit capability  
• Press-fit pins as auxiliary contacts  
• Current sensing shunt resistor  
• UL recognized, file no. E63532  
Module  
It(RMS)  
Tstg  
210  
-40 ... 125  
4000  
A
°C  
V
module without TIM  
Visol  
AC sinus 50Hz, t = 1 min  
Typical Applications*  
Characteristics  
• AC inverter drives  
• UPS  
Symbol Conditions  
IGBT  
min.  
typ.  
max.  
Unit  
• Renewable energy systems  
IC = 450 A  
Tj = 25 °C  
VCE(sat)  
1.90  
2.26  
2.20  
2.45  
V
V
Remarks  
V
GE = 15 V  
Tj = 150 °C  
• Product reliability results are valid for  
Tj=150°C  
chiplevel  
Tj = 25 °C  
Tj = 150 °C  
Tj = 25 °C  
Tj = 150 °C  
VCE0  
rCE  
1.10  
1.00  
1.78  
2.8  
1.20  
1.10  
2.2  
3.0  
6.4  
5
V
V
mΩ  
mΩ  
V
mA  
nF  
nF  
nF  
nC  
Ω
ns  
ns  
mJ  
ns  
ns  
• Visol between temperature sensor and  
power section is only 2500V  
• For storage and case temperature with  
TIM see document “TP(*) SEMiX 3p”  
chiplevel  
VGE = 15 V  
chiplevel  
VGE(th)  
ICES  
Cies  
Coes  
Cres  
QG  
RGint  
td(on)  
tr  
VGE=VCE, IC = 18 mA  
VGE = 0 V, VCE = 1700 V, Tj = 25 °C  
f = 1 MHz  
5.2  
5.8  
36.0  
1.50  
1.14  
3600  
1.7  
270  
90  
153  
815  
200  
VCE = 25 V  
f = 1 MHz  
f = 1 MHz  
V
GE = 0 V  
VGE = - 8 V...+ 15 V  
Tj = 25 °C  
VCC = 900 V  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
I
C = 450 A  
V
GE = +15/-15 V  
Eon  
td(off)  
tf  
R
R
G on = 2.7 Ω  
G off = 2.7 Ω  
di/dton = 4300 A/µs  
di/dtoff = 2200 A/µs  
du/dt = 3200 V/µs  
Ls = 21 nH  
Tj = 150 °C  
Eoff  
150  
mJ  
Rth(j-c)  
Rth(c-s)  
per IGBT  
per IGBT (λgrease=0.81 W/(m*K))  
per IGBT, pre-applied phase change  
material  
0.06  
K/W  
K/W  
0.029  
0.02  
Rth(c-s)  
K/W  
GB + shunt  
© by SEMIKRON  
Rev. 2.0 – 25.01.2017  
1

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