SEMiX453GB17E4Ip
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Unit
Tj = 25 °C
VCES
IC
1700
731
555
450
1350
-20 ... 20
V
A
A
A
A
V
Tc = 25 °C
Tc = 80 °C
Tj = 175 °C
ICnom
ICRM
VGES
ICRM = 3xICnom
VCC = 1000 V
SEMiX® 3p shunt
V
V
GE ≤ 15 V
CES ≤ 1700 V
Tj = 150 °C
tpsc
10
µs
°C
Tj
-40 ... 175
Inverse diode
Tj = 25 °C
VRRM
IF
1700
557
412
450
900
V
A
A
A
A
SEMiX453GB17E4Ip
Features
Tc = 25 °C
Tc = 80 °C
Tj = 175 °C
IFnom
IFRM
IFSM
Tj
IFRM = 2xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
• Homogeneous Si
2565
-40 ... 175
A
°C
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• Press-fit pins as auxiliary contacts
• Current sensing shunt resistor
• UL recognized, file no. E63532
Module
It(RMS)
Tstg
210
-40 ... 125
4000
A
°C
V
module without TIM
Visol
AC sinus 50Hz, t = 1 min
Typical Applications*
Characteristics
• AC inverter drives
• UPS
Symbol Conditions
IGBT
min.
typ.
max.
Unit
• Renewable energy systems
IC = 450 A
Tj = 25 °C
VCE(sat)
1.90
2.26
2.20
2.45
V
V
Remarks
V
GE = 15 V
Tj = 150 °C
• Product reliability results are valid for
Tj=150°C
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCE0
rCE
1.10
1.00
1.78
2.8
1.20
1.10
2.2
3.0
6.4
5
V
V
mΩ
mΩ
V
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
• Visol between temperature sensor and
power section is only 2500V
• For storage and case temperature with
TIM see document “TP(*) SEMiX 3p”
chiplevel
VGE = 15 V
chiplevel
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
VGE=VCE, IC = 18 mA
VGE = 0 V, VCE = 1700 V, Tj = 25 °C
f = 1 MHz
5.2
5.8
36.0
1.50
1.14
3600
1.7
270
90
153
815
200
VCE = 25 V
f = 1 MHz
f = 1 MHz
V
GE = 0 V
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 900 V
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
I
C = 450 A
V
GE = +15/-15 V
Eon
td(off)
tf
R
R
G on = 2.7 Ω
G off = 2.7 Ω
di/dton = 4300 A/µs
di/dtoff = 2200 A/µs
du/dt = 3200 V/µs
Ls = 21 nH
Tj = 150 °C
Eoff
150
mJ
Rth(j-c)
Rth(c-s)
per IGBT
per IGBT (λgrease=0.81 W/(m*K))
per IGBT, pre-applied phase change
material
0.06
K/W
K/W
0.029
0.02
Rth(c-s)
K/W
GB + shunt
© by SEMIKRON
Rev. 2.0 – 25.01.2017
1