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SEMIX302GAR12E4S_10 PDF预览

SEMIX302GAR12E4S_10

更新时间: 2022-03-19 05:46:01
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 双极性晶体管
页数 文件大小 规格书
5页 315K
描述
Trench IGBT Modules

SEMIX302GAR12E4S_10 数据手册

 浏览型号SEMIX302GAR12E4S_10的Datasheet PDF文件第2页浏览型号SEMIX302GAR12E4S_10的Datasheet PDF文件第3页浏览型号SEMIX302GAR12E4S_10的Datasheet PDF文件第4页浏览型号SEMIX302GAR12E4S_10的Datasheet PDF文件第5页 
SEMiX302GB12E4s  
Absolute Maximum Ratings  
Symbol Conditions  
Values  
Unit  
IGBT  
VCES  
1200  
463  
V
A
A
A
A
V
Tc = 25 °C  
Tc = 80 °C  
IC  
Tj = 175 °C  
356  
ICnom  
300  
ICRM  
ICRM = 3xICnom  
900  
VGES  
-20 ... 20  
SEMiX® 2s  
Trench IGBT Modules  
SEMiX302GB12E4s  
Features  
VCC = 800 V  
VGE 20 V  
VCES 1200 V  
Tj = 150 °C  
tpsc  
10  
µs  
°C  
Tj  
-40 ... 175  
Inverse diode  
Tc = 25 °C  
Tc = 80 °C  
IF  
356  
266  
A
A
Tj = 175 °C  
IFnom  
IFRM  
IFSM  
Tj  
300  
A
IFRM = 3xIFnom  
tp = 10 ms, sin 180°, Tj = 25 °C  
900  
A
1620  
A
• Homogeneous Si  
-40 ... 175  
°C  
• Trench = Trenchgate technology  
• VCE(sat) with positive temperature  
coefficient  
• High short circuit capability  
• UL recognized, file no. E63532  
Module  
It(RMS)  
Tstg  
600  
-40 ... 125  
4000  
A
°C  
V
Visol  
AC sinus 50Hz, t = 1 min  
Typical Applications*  
• AC inverter drives  
• UPS  
• Electronic Welding  
Characteristics  
Symbol Conditions  
IGBT  
min.  
typ.  
max.  
Unit  
Remarks  
• Case temperature limited to TC=125°C  
max.  
IC = 300 A  
VCE(sat)  
Tj = 25 °C  
1.8  
2.2  
2.05  
2.4  
V
V
V
GE = 15 V  
Tj = 150 °C  
chiplevel  
• Product reliability results are valid for  
Tj=150°C  
• Dynamic values apply to the  
following combination of resistors:  
Tj = 25 °C  
Tj = 150 °C  
Tj = 25 °C  
Tj = 150 °C  
VCE0  
rCE  
0.8  
0.7  
3.3  
5.0  
5.8  
0.1  
0.9  
0.8  
3.8  
5.3  
6.5  
0.3  
V
V
mΩ  
mΩ  
V
VGE = 15 V  
R
R
R
R
Gon,main = 0,5 Ω  
Goff,main = 0,5 Ω  
G,X = 2,2 Ω  
VGE(th)  
ICES  
VGE=VCE, IC = 12 mA  
Tj = 25 °C  
5
mA  
mA  
nF  
nF  
nF  
nC  
VGE = 0 V  
CE = 1200 V  
E,X = 0,5 Ω  
V
Tj = 150 °C  
f = 1 MHz  
f = 1 MHz  
f = 1 MHz  
Cies  
Coes  
Cres  
QG  
18.6  
1.16  
1.02  
1700  
2.50  
282  
60  
VCE = 25 V  
GE = 0 V  
V
VGE = - 8 V...+ 15 V  
Tj = 25 °C  
VCC = 600 V  
IC = 300 A  
RGint  
td(on)  
tr  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
ns  
ns  
Eon  
td(off)  
tf  
30  
mJ  
ns  
RG on = 1.9 Ω  
564  
117  
R
G off = 1.9 Ω  
di/dton = 5000 A/µs  
ns  
di/dtoff = 2800 A/µs  
Tj = 150 °C  
Eoff  
44  
mJ  
Rth(j-c)  
per IGBT  
0.096  
K/W  
GB  
© by SEMIKRON  
Rev. 0 – 05.05.2010  
1

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