SEMiX302GB12E4s
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
IGBT
VCES
1200
463
V
A
A
A
A
V
Tc = 25 °C
Tc = 80 °C
IC
Tj = 175 °C
356
ICnom
300
ICRM
ICRM = 3xICnom
900
VGES
-20 ... 20
SEMiX® 2s
Trench IGBT Modules
SEMiX302GB12E4s
Features
VCC = 800 V
VGE ≤ 20 V
VCES ≤ 1200 V
Tj = 150 °C
tpsc
10
µs
°C
Tj
-40 ... 175
Inverse diode
Tc = 25 °C
Tc = 80 °C
IF
356
266
A
A
Tj = 175 °C
IFnom
IFRM
IFSM
Tj
300
A
IFRM = 3xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
900
A
1620
A
• Homogeneous Si
-40 ... 175
°C
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognized, file no. E63532
Module
It(RMS)
Tstg
600
-40 ... 125
4000
A
°C
V
Visol
AC sinus 50Hz, t = 1 min
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Unit
Remarks
• Case temperature limited to TC=125°C
max.
IC = 300 A
VCE(sat)
Tj = 25 °C
1.8
2.2
2.05
2.4
V
V
V
GE = 15 V
Tj = 150 °C
chiplevel
• Product reliability results are valid for
Tj=150°C
• Dynamic values apply to the
following combination of resistors:
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCE0
rCE
0.8
0.7
3.3
5.0
5.8
0.1
0.9
0.8
3.8
5.3
6.5
0.3
V
V
mΩ
mΩ
V
VGE = 15 V
R
R
R
R
Gon,main = 0,5 Ω
Goff,main = 0,5 Ω
G,X = 2,2 Ω
VGE(th)
ICES
VGE=VCE, IC = 12 mA
Tj = 25 °C
5
mA
mA
nF
nF
nF
nC
Ω
VGE = 0 V
CE = 1200 V
E,X = 0,5 Ω
V
Tj = 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
Cies
Coes
Cres
QG
18.6
1.16
1.02
1700
2.50
282
60
VCE = 25 V
GE = 0 V
V
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
IC = 300 A
RGint
td(on)
tr
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
ns
ns
Eon
td(off)
tf
30
mJ
ns
RG on = 1.9 Ω
564
117
R
G off = 1.9 Ω
di/dton = 5000 A/µs
ns
di/dtoff = 2800 A/µs
Tj = 150 °C
Eoff
44
mJ
Rth(j-c)
per IGBT
0.096
K/W
GB
© by SEMIKRON
Rev. 0 – 05.05.2010
1