Datasheet > SEMIX302GB066HDS_08

SEMIX302GB066HDS_08

更新时间： 2022-12-17 23:40:40

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
5页	353K
描述
Trench IGBT Modules

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SEMIX302GB066HDS_08 数据手册

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SEMiX302GB066HDs

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

IGBT

V_CES

600

379

T_c= 25 °C

T_c= 80 °C

I_C

T_j= 175 °C

286

I_Cnom

I_CRM

V_GES

300

I_CRM= 2xI_Cnom

600

-20 ... 20

SEMiX^®2s

V_CC= 360 V

V_GE≤ 15 V

T_j= 150 °C

V_CES≤ 600 V

t_psc

µs

°C

Trench IGBT Modules

T_j

-40 ... 175

Inverse diode

SEMiX302GB066HDs

T_c= 25 °C

T_c= 80 °C

I_F

419

307

T_j= 175 °C

Preliminary Data

I_Fnom

I_FRM

I_FSM

T_j

300

Features

• Homogeneous Si

• Trench = Trenchgate technology

• V_CE(sat)with positive temperature

coefficient

I_FRM= 2xI_Fnom

t_p= 10 ms, sin 180°, T_j= 25 °C

600

1400

-40 ... 175

°C

Module

I_t(RMS)

T_stg

• UL recognised file no. E63532

600

-40 ... 125

4000

°C

Typical Applications

V_isol

AC sinus 50Hz, t = 1 min

• Matrix Converter

• Resonant Inverter

• Current Source Inverter

Characteristics

Symbol Conditions

IGBT

min.

typ.

max.

Unit

Remarks

• Case temperature limited to T_C=125°C

max.

• Product reliability results are valid for

T_j=150°C

• For short circuit: Soft R_Goff

recommended

I_C= 300 A

V_CE(sat)

T_j= 25 °C

1.45

1.70

1.9

2.1

_GE= 15 V

T_j= 150 °C

chiplevel

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

0.9

0.85

1.8

0.9

3.0

4.0

6.5

0.45

• Take care of over-voltage caused by

stray inductance

mΩ

V_GE= 15 V

2.8

V_GE(th)

I_CES

V_GE=V_CE, I_C= 4.8 mA

T_j= 25 °C

5.8

0.15

Ω

V_GE= 0 V

_CE= 600 V

T_j= 150 °C

f = 1 MHz

C_ies

C_oes

C_res

Q_G

18.5

1.15

0.55

2400

1.00

110

V_CE= 25 V

_GE= 0 V

V_GE= - 8 V...+ 15 V

T_j= 25 °C

R_Gint

t_d(on)

t_r

V_CC= 300 V

I_C= 300 A

T_j= 150 °C

E_on

t_d(off)

t_f

11.5

820

_{G on}= 5.1 Ω

_{G off}= 5.1 Ω

E_off

R_th(j-c)

K/W

per IGBT

0.16

Rev. 11 – 02.12.2008

12 3 4 5

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