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SD1868E3 PDF预览

SD1868E3

更新时间: 2024-11-16 21:07:55
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网晶体管
页数 文件大小 规格书
1页 55K
描述
RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN,

SD1868E3 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.84其他特性:HIGH RELIABILITY
外壳连接:BASE最大集电极电流 (IC):5.2 A
集电极-发射极最大电压:15 V配置:SINGLE
最高频带:L BANDJESD-30 代码:R-CDFM-F2
元件数量:1端子数量:2
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管元件材料:SILICON
标称过渡频率 (fT):1600 MHzBase Number Matches:1

SD1868E3 数据手册

  

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