5秒后页面跳转
SD1888E3 PDF预览

SD1888E3

更新时间: 2024-11-16 21:07:55
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网晶体管
页数 文件大小 规格书
1页 55K
描述
RF Power Bipolar Transistor, L Band, Silicon, NPN,

SD1888E3 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code:compliant风险等级:5.84
Is Samacsys:N最高频带:L BAND
JESD-30 代码:R-CDFM-F2端子数量:2
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管元件材料:SILICON
标称过渡频率 (fT):1650 MHzBase Number Matches:1

SD1888E3 数据手册

  

与SD1888E3相关器件

型号 品牌 获取价格 描述 数据表
SD18-8R2 COOPER

获取价格

General Purpose Inductor, 8.2uH, 20%, 1 Element, Ferrite-Core, SMD, CHIP
SD18-8R2-R COOPER

获取价格

General Purpose Inductor, 8.2uH, 20%, 1 Element, Ferrite-Core, SMD, 2020, ROHS COMPLIANT
SD188SBWS SEMTECH

获取价格

SILICON SCHOTTKY BARRIER DIODE
SD1891 MICROSEMI

获取价格

RF Power Bipolar Transistor, L Band, Silicon, NPN
SD1891-03 STMICROELECTRONICS

获取价格

RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS
SD1891E3 MICROSEMI

获取价格

RF Power Bipolar Transistor, L Band, Silicon, NPN,
SD1893 SEMICOA

获取价格

Chip Type 2C1893 Geometry 4500 Polarity NPN
SD1893-03 STMICROELECTRONICS

获取价格

RF & MICROWAVE TRANSISTORS 1.6 GHZ SATCOM APPLICATIONS
SD1893E3 MICROSEMI

获取价格

RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN,
SD1893F SEMICOA

获取价格

Chip Type 2C1893 Geometry 4500 Polarity NPN