Datasheet > SD1899

SD1899

更新时间： 2024-11-15 22:50:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管射频微波通信
页数	文件大小	规格书
5页	62K
描述
RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS

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中文翻译

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数据手册

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SD1899 数据手册

SD1899

RF & MICROWAVE TRANSISTORS

SATELLITE COMMUNICATIONS APPLICATIONS

REFRACTORY/GOLD METALLIZATION

EFFICIENCY - 50% TYPICAL

30 W MIN. WITH 9.3 dB GAIN

OUT =

.250 x .320 2LFL (M170)

epoxy sealed

ORDER CODE

SD1899

BRANDING

SD1899

PIN CONNECTION

DESCRIPTION

The SD1899 is a common base silicon NPN bipolar

device optimized for 1.6 GHz SATCOM applica-

tions.

SD1899 offers superior gain and collector effi-

ciency, making it an ideal choice for Class C power

amplifiers used in portable as well as fixed SAT-

COM terminals.

1. Collector

2. Emitter

3. Base

= 25 C)

ABSOLUTE MAXIMUM RATINGS (T

case

Symbol

V_CBO

V_CES

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Device Current

3.0

3.5

P_DISS

T_J

Power Dissipation (+25°C)

Junction Temperature

Storage Temperature

64.8

+200

T_STG

65 to +150

−

THERMAL DATA

R_TH(j-c)

Junction-Case Thermal Resistance

2.7

C/W

January 6, 1997

1/5

12 3 4 5

中文翻译

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