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SD1888 PDF预览

SD1888

更新时间: 2024-11-16 21:07:55
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网晶体管
页数 文件大小 规格书
1页 55K
描述
RF Power Bipolar Transistor, L Band, Silicon, NPN,

SD1888 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete包装说明:FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code:compliant风险等级:5.92
Is Samacsys:N最高频带:L BAND
JESD-30 代码:R-CDFM-F2JESD-609代码:e0
端子数量:2封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN LEAD端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):1650 MHz
Base Number Matches:1

SD1888 数据手册

  

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