是否Rohs认证: | 不符合 | 生命周期: | Transferred |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8504.50.80.00 | 风险等级: | 5.14 |
Is Samacsys: | N | 型芯材料: | FERRITE |
直流电阻: | 12.35 Ω | 标称电感 (L): | 820 µH |
电感器应用: | POWER INDUCTOR | 电感器类型: | GENERAL PURPOSE INDUCTOR |
功能数量: | 1 | 端子数量: | 2 |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
形状/尺寸说明: | RECTANGULAR PACKAGE | 屏蔽: | YES |
表面贴装: | YES | 端子位置: | DUAL ENDED |
端子形状: | ONE SURFACE | 测试频率: | 0.1 MHz |
容差: | 20% | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SD18-821-R | COOPER |
获取价格 |
General Purpose Inductor, 820uH, 20%, 1 Element, Ferrite-Core, SMD, ROHS COMPLIANT | |
SD1886 | MICROSEMI |
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RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN, | |
SD1886E3 | MICROSEMI |
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RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN, | |
SD1887 | MICROSEMI |
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RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN, | |
SD1887E3 | MICROSEMI |
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RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN, | |
SD1888 | MICROSEMI |
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RF Power Bipolar Transistor, L Band, Silicon, NPN, | |
SD1888-03 | STMICROELECTRONICS |
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RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS | |
SD1888E3 | MICROSEMI |
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RF Power Bipolar Transistor, L Band, Silicon, NPN, | |
SD18-8R2 | COOPER |
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General Purpose Inductor, 8.2uH, 20%, 1 Element, Ferrite-Core, SMD, CHIP | |
SD18-8R2-R | COOPER |
获取价格 |
General Purpose Inductor, 8.2uH, 20%, 1 Element, Ferrite-Core, SMD, 2020, ROHS COMPLIANT |