是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | M124, 4 PIN |
针数: | 4 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.9 |
外壳连接: | BASE | 最大集电极电流 (IC): | 2 A |
集电极-发射极最大电压: | 30 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 20 | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码: | O-CRPM-F4 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 4 |
最高工作温度: | 200 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | ROUND | 封装形式: | POST/STUD MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 53 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | FLAT |
端子位置: | RADIAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 960 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SD1512E3 | MICROSEMI |
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RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, M124, 4 P | |
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RF Power Bipolar Transistor, Silicon, NPN | |
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RF Power Bipolar Transistor, Silicon, NPN | |
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RF Power Bipolar Transistor, Silicon, NPN, | |
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RF Power Bipolar Transistor, Silicon, NPN | |
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RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, | |
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TRANSISTOR,BJT,NPN,500MA I(C),STX-8 | |
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TRANSISTOR,BJT,NPN,500MA I(C),STX-8 | |
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RF & MICROWAVE TRANSISTORS IFF/DME APPLICATIONS |