Datasheet > SCTH100N120G2-AG

SCTH100N120G2-AG

更新时间： 2023-12-20 18:46:08

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
14页	434K
描述
Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mOhm (typ. TJ = 25 C) in an H2PAK-7 package

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SCTH100N120G2-AG 数据手册

SCTH100N120G2-AG

Datasheet

Automotive-grade silicon carbide Power MOSFET, 1200 V, 75 A,

30 mΩ (typ., T_J= 25 °C) in an H²PAK-7 package

Features

TAB

R typ.

DS(on)

Order code

SCTH100N120G2-AG

1200 V

30 mΩ

75 A

•

AEC-Q101 qualified

High speed switching performance

Very fast and robust intrinsic body diode

Low capacitance

H²PAK-7

Drain (TAB)

Applications

•

Traction inverters

DC-DC converters

Solar inverters

OBC

Gate (1)

Driver

source (2)

Power

source (3, 4, 5, 6, 7)

Description

N-chG1DS2PS34567DTAB

This silicon carbide Power MOSFET device has been developed using ST’s

advanced and innovative 2^ndgeneration SiC MOSFET technology. The device

features remarkably low on-resistance per unit area and very good switching

performance. The variation of switching loss is almost independent of junction

temperature.

Product status link

SCTH100N120G2-AG

Product summary

Order code

SCTH100N120G2-AG

Marking

Package

Packing

100N120AG

H²PAK-7

Tape and reel

DS12783 - Rev 2 - July 2020

For further information contact your local STMicroelectronics sales office.

www.st.com

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