Datasheet > SCTHS250N65G3

SCTHS250N65G3

更新时间： 2023-12-20 18:44:56

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	568K
描述
Automotive-grade silicon carbide Power MOSFET 650 V, 6.7 mOhm typ., 207 A in a STPAK package

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SCTHS250N65G3 数据手册

SCTHS250N65G3

Datasheet

Automotive-grade silicon carbide Power MOSFET 650 V, 6.7 mΩ typ., 237 A

in a STPAK package

Features

typ.

Order codes

DS(on)

SCTHS250N65G3AG

SCTHS250N65G3TAG

650 V

6.7 mΩ

237 A

•

AEC-Q101 qualified

STPAK

Very low R_DS(on)over the entire temperature range

High speed switching performances

Very fast and robust intrinsic body diode

Drain(4)

Very high operating junction temperature capability (T_J= 200 °C)

Source sensing pin for increased efficiency

Gate(3)

Driver

Application

source(2)

•

Main inverter (electric traction)

Power

source(1)

Description

NG3DS2PS1D4

This silicon carbide Power MOSFET device has been developed using ST’s

advanced and innovative 3^rdgeneration SiC MOSFET technology. The device

features a very low R_DS(on)over the entire temperature range combined with low

capacitances and very high switching operations, which improve application

performance in frequency, energy efficiency, system size and weight reduction.

Product status link

SCTHS250N65G3

Product summary

Order code

Marking

SCTHS250N65G3AG

S25N65G3PAG

STPAK

Package

Packing

Tray

Order code

Marking

SCTHS250N65G3TAG

S25N65G3PAG

STPAK

Package

Packing

Tube

DS14058 - Rev 3 - July 2023

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...12

中文翻译

下载PDF

与SCTHS250N65G3相关器件

型号	品牌	获取价格	描述	数据表
SCTHS300N75G3AG	STMICROELECTRONICS	获取价格	Automotive-grade silicon carbide Power MOSFET 750 V, 6.5 mOhm typ., 300 A in a STPAK packa
SCTL35N65G2V	STMICROELECTRONICS	获取价格	Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV package
SCTL90N65G2V	STMICROELECTRONICS	获取价格	Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV package
SCTMU001F	ROHM	获取价格	N-channel SiC power MOSFET
SCTMU001F_17	ROHM	获取价格	N-channel SiC power MOSFET
SCTN0102N2	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 1.25A I(D), 20V, 1-Element, N-Channel, Silicon, Meta
SCTN0104N2	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 1.25A I(D), 40V, 1-Element, N-Channel, Silicon, Meta
SCTN0106N2	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
SCTN0110N2	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.8A I(D), 100V, 1-Element, N-Channel, Silicon, Meta
SCTN0520N2	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.7A I(D), 200V, 1-Element, N-Channel, Silicon, Meta