Datasheet > SCTMU001F

SCTMU001F

更新时间： 2024-02-07 16:51:14

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
10页	732K
描述
N-channel SiC power MOSFET

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SCTMU001F 数据手册

SCTMU001F

Datasheet

N-channel SiC power MOSFET

Outline

TO220AB

V_DSS

400V

120m

20A

R_DS(on)(Typ.)

I_D

P_D

132W

(1) (2) (3)

Features

Inner circuit

(2)

1) Low on-resistance

2) Fast switching speed

3) Fast reverse recovery

4) Easy to parallel

(1) Gate

(2) Drain

(3) Source

(1)

*1 Body Diode

5) Simple to drive

(3)

6) Pb-free lead plating ; RoHS compliant

Packaging specifications

Packing

Tube

Reel size (mm)

Application

・Audio

Tape width (mm)

Type

Basic ordering unit (pcs)

Packing code

Marking

SCTMU001F

Absolute maximum ratings (T_a= 25C)

Parameter

Symbol

V_DSS

Value

400

Unit

Drain - Source voltage

T_c= 25C

Continuous drain current

Pulsed drain current

I_D

I_D,pulse

V_GSS

P_D

Gate - Source voltage

-6 to 22

132

Power dissipation (T_c= 25C)

Junction temperature

C

T_j

150

T_stg

Range of storage temperature

-55 to 150

www.rohm.com

2017.07 - Rev.D

1/8

12 3 4 5 6 7...10

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