Datasheet > SCTL35N65G2V

SCTL35N65G2V

更新时间： 2023-12-20 18:46:03

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
14页	317K
描述
Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV package

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SCTL35N65G2V 数据手册

SCTL35N65G2V

Datasheet

Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 40 A

in a PowerFLAT 8x8 HV package

Features

max.

Order code

DS(on)

SCTL35N65G2V

650 V

67 mΩ

40 A

PowerFLAT 8x8 HV

•

Very fast and robust intrinsic body diode

Low capacitances

Drain(5)

Source sensing pin for increased efficiency

Applications

Gate(1)

Driver

•

Switching mode power supply

DC-DC converters

source(2)

Industrial motor control

Power

source(3, 4)

NG1DS2PS34D5

Description

This silicon carbide Power MOSFET device has been developed using ST’s

advanced and innovative 2^ndgeneration SiC MOSFET technology. The device

features remarkably low on-resistance per unit area and very good switching

performance. The variation of switching loss is almost independent of junction

temperature.

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SCTL35N65G2V

Product summary

Order code

Marking

SCTL35N65G2V

35N65G2V

PowerFLAT 8x8 HV

Tape and reel

Package

Packing

DS13474 - Rev 1 - December 2020

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...14

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