型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SCTH2010-R56 | ETC |
获取价格 |
SMD POWER INDUCTORS | |
SCTH35N65G2V-7 | STMICROELECTRONICS |
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碳化硅功率MOSFET,650 V、45 A、55 mOhm(典型值,TJ = 25 C) | |
SCTH35N65G2V-7AG | STMICROELECTRONICS |
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汽车级碳化硅功率MOSFET,650 V、45 A、55 mOhm(典型值,TJ = 25 | |
SCTH40N120G2V-7 | STMICROELECTRONICS |
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Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an H2PAK-7 package | |
SCTH40N120G2V7AG | STMICROELECTRONICS |
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汽车级碳化硅功率MOSFET,1200 V、33 A、75 mOhm(典型值,TJ = 2 | |
SCTH60N120G2-7 | STMICROELECTRONICS |
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Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an H2PAK-7 package | |
SCTH70N120G2V-7 | STMICROELECTRONICS |
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Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 90 A in an H2PAK-7 package | |
SCTH90N65G2V-7 | STMICROELECTRONICS |
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碳化硅功率MOSFET,650 V、116 A、18 mOhm(典型值,TJ = 25°C | |
SCTHS200N120G3AG | STMICROELECTRONICS |
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汽车级碳化硅功率MOSFET,1200 V、20 mOhm(典型值),90 A,TPAK封 | |
SCTHS250N65G2G | STMICROELECTRONICS |
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Automotive-grade silicon carbide Power MOSFET 650 V, 8 mOhm typ., 250 A in a STPAK package |