Datasheet > SCTHS200N120G3AG

SCTHS200N120G3AG

更新时间： 2024-09-30 14:57:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
11页	302K
描述
汽车级碳化硅功率MOSFET，1200 V、20 mOhm（典型值），90 A，TPAK封装

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SCTHS200N120G3AG 数据手册

SCTHS200N120G3AG

Datasheet

Automotive-grade silicon carbide Power MOSFET 1200 V, 9.3 mΩ typ., 170 A

in a STPAK package

Features

DS(on)

typ.

Order code

SCTHS200N120G3AG

1200 V

9.3 mΩ

170 A

•

AEC-Q101 qualified

Very low R_DS(on)over the entire temperature range

High speed switching performances

STPAK

Very fast and robust intrinsic body diode

Source sensing pin for increased efficiency

Drain(4)

Application

•

Main inverter (electric traction)

Gate(3)

Driver

Description

source(2)

Power

source(1)

This silicon carbide Power MOSFET device has been developed using ST’s

advanced and innovative 3^rdgeneration SiC MOSFET technology. The device

features a very low R_DS(on)over the entire temperature range combined with

low capacitances and very high switching operations, which improve application

performance in frequency, energy efficiency, system size and weight reduction.

NG3DS2PS1D4

Product status link

SCTHS200N120G3AG

Product summary

Order code

Marking

SCTHS200N120G3AG

SCT200N120G3AG

STPAK

Package

Packing

Tray

DS14089 - Rev 1 - October 2022

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...11

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