Datasheet > SCTHS250N65G2G

SCTHS250N65G2G

更新时间： 2023-12-20 18:44:38

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	260K
描述
Automotive-grade silicon carbide Power MOSFET 650 V, 8 mOhm typ., 250 A in a STPAK package

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SCTHS250N65G2G 数据手册

SCTHS250N65G2G

Datasheet

Automotive-grade silicon carbide Power MOSFET 650 V, 8.0 mΩ typ., 250 A

in a STPAK package

Features

typ.

Order code

DS(on)

SCTHS250N65G2G

650 V

8.0 mΩ

250 A

•

AEC-Q101 qualified

Very fast and robust intrinsic body diode

STPAK

Extremely low gate charge and input capacitance

Source sensing pin for increased efficiency

Drain(4)

Applications

•

Main inverter (electric traction)

DC/DC converter for EV/HEV

Gate(3)

Driver

Description

source(2)

Power

source(1)

This silicon carbide Power MOSFET device has been developed using ST’s

advanced and innovative 2^ndgeneration SiC MOSFET technology. The device

features remarkably low on-resistance per unit area and very good switching

performance. The variation of switching loss is almost independent of junction

temperature.

NG3DS2PS1D4

Product status link

SCTHS250N65G2G

Product summary

Order code

Marking

SCTHS250N65G2G

SCHS250N65G2

STPAK

Package

Packing

Tray

DS14295 - Rev 1 - April 2023

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...12

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