Datasheet > SCTH60N120G2-7

SCTH60N120G2-7

更新时间： 2023-12-20 18:45:54

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
14页	348K
描述
Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an H2PAK-7 package

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SCTH60N120G2-7 数据手册

SCTH60N120G2-7

Datasheet

Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A in an H²PAK-7 package

Features

TAB

DS(on)

max.

Order code

SCTH60N120G2-7

1200 V

52 mΩ

60 A

•

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitance

Source sensing pin for increased efficiency

H²PAK-7

Applications

Drain (TAB)

•

Switching mode power supply

DC-DC converters

Industrial motor control

Gate (1)

Description

Driver

source (2)

This silicon carbide Power MOSFET device has been developed using ST’s

advanced and innovative 2^ndgeneration SiC MOSFET technology. The device

features remarkably low on-resistance per unit area and very good switching

performance. The variation of switching loss is almost independent of junction

temperature.

Power

source (3, 4, 5, 6, 7)

N-chG1DS2PS34567DTAB

Product status link

SCTH60N120G2-7

Product summary

Order code

SCTH60N120G2-7

SCT60N120G2V

H²PAK-7

Marking

Package

Packing

Tape and reel

DS13621 - Rev 2 - May 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...14

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