Datasheet > SCTH35N65G2V-7AG

SCTH35N65G2V-7AG

更新时间： 2023-12-20 18:43:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	375K
描述
汽车级碳化硅功率MOSFET，650 V、45 A、55 mOhm（典型值，TJ = 25 C），H2PAK-7封装

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SCTH35N65G2V-7AG 数据手册

SCTH35N65G2V-7AG

Datasheet

Automotive-grade silicon carbide Power MOSFET, 650 V, 55 mΩ typ., 45 A in an

H²PAK-7 package

Features

TAB

DS(on)

max.

Order code

SCTH35N65G2V-7AG

650 V

67 mΩ

45 A

•

AEC-Q101 qualified

Very fast and robust intrinsic body diode

H²PAK-7

Extremely low gate charge and input capacitance

Source sensing pin for increased efficiency

Drain (TAB)

Applications

•

Main inverter (electric traction)

DC/DC converter for EV/HEV

On board charger (OBC)

Gate (1)

Driver

source (2)

Description

Power

source (3, 4, 5, 6, 7)

This silicon carbide Power MOSFET device has been developed using ST’s

N-chG1DS2PS34567DTAB

advanced and innovative 2^ndgeneration SiC MOSFET technology. The device

features remarkably low on-resistance per unit area and very good switching

performance. The variation of switching loss is almost independent of junction

temperature.

Product status link

SCTH35N65G2V-7AG

Product summary

Order code

SCTH35N65G2V-7AG

35N65AG

Marking

Package

Packing

H²PAK-7

Tape and reel

DS12029 - Rev 5 - January 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...15

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