Datasheet > SCTH40N120G2V7AG

SCTH40N120G2V7AG

更新时间： 2023-12-20 18:45:06

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
14页	371K
描述
汽车级碳化硅功率MOSFET，1200 V、33 A、75 mOhm（典型值，TJ = 25 C），H2PAK-7封装

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SCTH40N120G2V7AG 数据手册

SCTH40N120G2V7AG

Datasheet

Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A

in an H²PAK-7 package

Features

TAB

DS(on)

max.

Order code

SCTH40N120G2V7AG

1200 V

105 mΩ

33 A

•

AEC-Q101 qualified

Very fast and robust intrinsic body diode

H²PAK-7

Extremely low gate charge and input capacitance

Source sensing pin for increased efficiency

Drain (TAB)

Applications

•

Main inverter (electric traction)

DC/DC converter for EV/HEV

On board charger (OBC)

Gate (1)

Driver

source (2)

Description

Power

source (3, 4, 5, 6, 7)

This silicon carbide Power MOSFET device has been developed using ST’s

N-chG1DS2PS34567DTAB

advanced and innovative 2^ndgeneration SiC MOSFET technology. The device

features remarkably low on-resistance per unit area and very good switching

performance. The variation of switching loss is almost independent of junction

temperature.

Product status link

SCTH40N120G2V7AG

Product summary

Order code

SCTH40N120G2V7AG

40N120AG

Marking

Package

Packing

H²PAK-7

Tape and reel

DS12969 - Rev 3 - November 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...14

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