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SB16150DC_08 PDF预览

SB16150DC_08

更新时间: 2024-11-05 06:10:07
品牌 Logo 应用领域
WTE 高压
页数 文件大小 规格书
4页 64K
描述
16A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER

SB16150DC_08 数据手册

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WTE  
POWER SEMICONDUCTORS  
SB16150DC – SB16200DC  
16A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER  
Features  
Schottky Barrier Chip  
C
Guard Ring Die Construction for  
Transient Protection  
A
J
Low Forward Voltage Drop  
Low Power Loss, High Efficiency  
High Surge Current Capability  
For Use in Low Voltage, High Frequency  
Inverters, Free Wheeling, and Polarity  
Protection Applications  
B
D
E
PIN 1  
2
3
G
H
K
P
P
D2 PAK/TO-263  
Min  
Mechanical Data  
Dim  
Max  
10.40  
10.60  
4.80  
9.10  
Case: D2PAK/TO-263, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
A
B
C
D
E
G
H
J
9.80  
9.60  
4.40  
Polarity: See Diagram  
Weight: 1.7 grams (approx.)  
Mounting Position: Any  
Marking: Type Number  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
PIN 1 -  
+
8.50  
PIN 3 -  
Case, PIN 2  
2.80  
1.00  
1.40  
0.90  
1.40  
0.70  
2.75  
1.20  
K
P
0.30  
2.35  
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
SB16150DC  
SB16200DC  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
150  
105  
200  
140  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
V
A
Average Rectified Output Current  
@TC = 90°C  
16  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed  
on rated load (JEDEC Method)  
IFSM  
150  
0.92  
A
Forward Voltage  
@IF = 8.0A  
VFM  
IRM  
V
Peak Reverse Current  
@TA = 25°C  
0.5  
100  
mA  
At Rated DC Blocking Voltage  
@TA = 100°C  
Typical Junction Capacitance (Note 1)  
Typical Thermal Resistance (Note 2)  
Cj  
700  
2.0  
pF  
°C/W  
°C  
RθJC  
Operating and Storage Temperature Range  
Tj, TSTG  
-65 to +150  
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
2. Thermal resistance junction to case mounted on heatsink.  
SB16150DC – SB16200DC  
1 of 4  
© 2008 Won-Top Electronics  

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