®
SB16150F – SB16200F
16A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
WON-TOP ELECTRONICS
Pb
Features
Schottky Barrier Chip
B
Guard Ring for Transient Protection
Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Current Capability
Epoxy Meets UL 94V-0 Classification
Ideally Suited for Use in High Frequency
SMPS, Inverters and As Free Wheeling Diodes
ITO-220A
C
Dim
A
B
C
D
E
Min
14.60
9.70
2.55
—
Max
15.40
10.30
2.85
G
A
E
PIN1
3
4.16
D
13.00
0.30
3.00 Ø
6.30
4.20
2.50
0.36
2.60
4.83
13.80
0.90
F
G
H
I
3.50 Ø
6.90
Mechanical Data
F
Case: ITO-220A, Full Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 1.9 grams (approx.)
4.80
P
J
2.90
K
L
0.80
I
3.30
P
5.33
Mounting Position: Any
H
L
J
All Dimensions in mm
Mounting Torque: 0.6 N.m Max.
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
PIN 1
PIN 3
K
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol
SB16150F
SB16200F
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
150
105
200
140
V
RMS Reverse Voltage
VR(RMS)
IO
V
A
Average Rectified Output Current
@TC = 100°C
16
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed on
Rated Load (JEDEC Method)
IFSM
VFM
150
A
V
Forward Voltage
@IF = 16A, TJ = 25°C
@IF = 16A, TJ = 125°C
0.92
0.82
Peak Reverse Current
At Rated DC Blocking Voltage
@TJ = 25°C
@TJ = 100°C
0.2
10
IRM
CJ
mA
pF
Typical Junction Capacitance (Note 1)
200
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case
RθJA
RθJC
75
4.0
°C/W
RMS Isolation Voltage Terminals to Case, t = 1 min
Operating and Storage Temperature Range
VISO
1500
V
TJ, TSTG
-55 to +150
°C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
© Won-Top Electronics Co., Ltd.
Revision: September, 2012
www.wontop.com
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