®
SB16150 – SB16200
16A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
WON-TOP ELECTRONICS
Pb
Features
Schottky Barrier Chip
B
Guard Ring for Transient Protection
Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Current Capability
Epoxy Meets UL 94V-0 Classification
Ideally Suited for Use in High Frequency
SMPS, Inverters and As Free Wheeling Diodes
TO-220A
C
Dim
A
B
C
D
E
Min
13.90
9.80
2.54
3.56
12.70
0.51
3.55 Ø
5.75
4.16
2.03
0.30
1.14
4.83
Max
15.90
10.70
3.43
G
A
E
PIN1
3
4.56
D
14.73
0.96
F
G
H
I
4.09 Ø
6.85
Mechanical Data
F
Case: TO-220A, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 1.9 grams (approx.)
5.00
P
J
2.92
K
L
0.65
I
1.40
P
5.33
Mounting Position: Any
H
L
J
All Dimensions in mm
Mounting Torque: 0.6 N.m Max.
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
PIN 1
PIN 3
Case
K
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol
SB16150
SB16200
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
150
105
200
140
V
RMS Reverse Voltage
VR(RMS)
IO
V
A
Average Rectified Output Current
@TC = 100°C
16
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed on
Rated Load (JEDEC Method)
IFSM
VFM
150
A
V
Forward Voltage
@IF = 16A, TJ = 25°C
@IF = 16A, TJ = 125°C
0.92
0.82
Peak Reverse Current
At Rated DC Blocking Voltage
@TJ = 25°C
@TJ = 100°C
0.2
10
IRM
CJ
mA
pF
Typical Junction Capacitance (Note 1)
200
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case
RθJA
RθJC
73
2.0
°C/W
°C
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
© Won-Top Electronics Co., Ltd.
Revision: September, 2012
www.wontop.com
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