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SB16200CT PDF预览

SB16200CT

更新时间: 2023-12-06 20:09:12
品牌 Logo 应用领域
WON-TOP /
页数 文件大小 规格书
4页 43K
描述
Powerpack

SB16200CT 数据手册

 浏览型号SB16200CT的Datasheet PDF文件第2页浏览型号SB16200CT的Datasheet PDF文件第3页浏览型号SB16200CT的Datasheet PDF文件第4页 
®
SB16150CT – SB16200CT  
16A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER  
WON-TOP ELECTRONICS  
Features  
Schottky Barrier Chip  
B
Guard Ring for Transient Protection  
Low Forward Voltage Drop  
Low Power Loss, High Efficiency  
High Surge Current Capability  
Epoxy Meets UL 94V-0 Classification  
Ideally Suited for Use in High Frequency  
SMPS, Inverters and As Free Wheeling Diodes  
TO-220  
C
Dim  
A
B
C
D
E
Min  
13.90  
9.80  
2.54  
3.56  
12.70  
0.51  
3.55 Ø  
5.75  
4.16  
2.03  
0.30  
1.14  
2.29  
Max  
15.90  
10.70  
3.43  
G
A
E
PIN1  
2
3
4.56  
D
14.73  
0.96  
F
G
H
I
4.09 Ø  
6.85  
Mechanical Data  
F
Case: TO-220, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: See Diagram  
Weight: 1.9 grams (approx.)  
5.00  
P
J
2.92  
K
L
0.65  
I
1.40  
P
2.79  
Mounting Position: Any  
H
L
J
All Dimensions in mm  
Mounting Torque: 0.6 N.m Max.  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
PIN 1  
PIN 3  
PIN 2  
Case  
K
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
SB16150CT  
SB16200CT  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
150  
105  
200  
140  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
V
A
Average Rectified Output Current  
@TC = 100°C  
Total Device  
Per Diode  
16  
8.0  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed on  
Rated Load (JEDEC Method)  
IFSM  
VFM  
150  
A
V
Forward Voltage per diode @IF = 8.0A, TJ = 25°C  
@IF = 8.0A, TJ = 125°C  
0.92  
0.82  
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TJ = 25°C  
@TJ = 100°C  
0.2  
10  
IRM  
CJ  
mA  
pF  
Typical Junction Capacitance (Note 1)  
200  
Thermal Resistance Junction to Ambient per diode  
Thermal Resistance Junction to Case per diode  
RθJA  
RθJC  
60  
2.0  
°C/W  
°C  
Operating and Storage Temperature Range  
TJ, TSTG  
-55 to +150  
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2012  
www.wontop.com  
1

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