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S9005P2CT PDF预览

S9005P2CT

更新时间: 2024-11-04 22:22:31
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2页 65K
描述
20A SCHOTTKY BARRIER RECTIFIER

S9005P2CT 数据手册

 浏览型号S9005P2CT的Datasheet PDF文件第2页 
S9005P2CT  
20A SCHOTTKY BARRIER RECTIFIER  
Features  
·
·
Schottky Barrier Chip  
Guard Ring Die Construction for  
Transient Protection  
TO-220AB  
·
·
·
Low Power Loss, High Efficiency  
High Surge Capability  
High Current Capability and Low Forward  
Voltage Drop  
For Use in Low Voltage, High Frequency  
Inverters, Free Wheeling, and Polarity  
Protection Applications  
Plastic Material - UL Flammability  
Classification 94V-0  
Dim  
A
B
C
D
E
Min  
14.22  
9.65  
2.54  
5.84  
¾
Max  
15.88  
10.67  
3.43  
L
B
M
·
·
C
D
E
6.86  
K
A
6.25  
G
H
J
12.70  
2.29  
0.51  
14.73  
2.79  
Mechanical Data  
1.14  
G
K
L
3.53Æ 4.09Æ  
·
·
Case: Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: As Marked on Body  
Weight: 2.24 grams (approx)  
Mounting Position: Any  
J
N
3.56  
1.14  
0.30  
2.03  
4.83  
1.40  
0.64  
2.92  
M
N
P
·
·
·
·
H
H
P
All Dimensions in mm  
Marking: Type Number  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
S9005P2CT  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
100  
V
Minimum Avalanche Breakdown Voltage  
per element (Note 1)  
¾
110  
20  
V
A
@ 0.9A  
Average Rectified Output Current  
(Note 1 & 3)  
IO  
Non-Repetitive Peak Forward Surge Current 8.3ms  
single half sine-wave superimposed on rated load  
(JEDEC Method) (Note 3)  
IFSM  
225  
A
Instantaneous Forward Voltage Drop  
@ iF = 10A  
vFM  
IRM  
0.70  
V
Peak Reverse Current  
at Rated DC Blocking Voltage  
@ TC 25°C  
=
2.0  
80  
mA  
@ TC = 125°C  
Cj  
Typical Junction Capacitance per element (Note 2)  
Voltage Rate of Change at Rated DC Blocking Voltage  
Non-repetitive Avalanche Energy  
325  
pF  
dv/dt  
10000  
V/ms  
W
10  
mJ  
(Constant Current During a 20ms pulse)  
@ TC = 125°C  
Typical Thermal Resistance Junction to Case per element  
(Note 1)  
RqJc  
1.5  
K/W  
Tj, TSTG  
Operating and Storage Temperature Range  
-60 +150  
°C  
Notes:  
1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.  
3. IFSM and IO values shown are for entire package. For any single diode the values are one half of listed value.  
DS23028 Rev. P-5  
1 of 2  
S9005P2CT  

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