S9005P2CT
20A SCHOTTKY BARRIER RECTIFIER
Features
·
·
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
TO-220AB
·
·
·
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material - UL Flammability
Classification 94V-0
Dim
A
B
C
D
E
Min
14.22
9.65
2.54
5.84
¾
Max
15.88
10.67
3.43
L
B
M
·
·
C
D
E
6.86
K
A
6.25
G
H
J
12.70
2.29
0.51
14.73
2.79
Mechanical Data
1.14
G
K
L
3.53Æ 4.09Æ
·
·
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Weight: 2.24 grams (approx)
Mounting Position: Any
J
N
3.56
1.14
0.30
2.03
4.83
1.40
0.64
2.92
M
N
P
·
·
·
·
H
H
P
All Dimensions in mm
Marking: Type Number
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
S9005P2CT
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
100
V
Minimum Avalanche Breakdown Voltage
per element (Note 1)
¾
110
20
V
A
@ 0.9A
Average Rectified Output Current
(Note 1 & 3)
IO
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method) (Note 3)
IFSM
225
A
Instantaneous Forward Voltage Drop
@ iF = 10A
vFM
IRM
0.70
V
Peak Reverse Current
at Rated DC Blocking Voltage
@ TC 25°C
=
2.0
80
mA
@ TC = 125°C
Cj
Typical Junction Capacitance per element (Note 2)
Voltage Rate of Change at Rated DC Blocking Voltage
Non-repetitive Avalanche Energy
325
pF
dv/dt
10000
V/ms
W
10
mJ
(Constant Current During a 20ms pulse)
@ TC = 125°C
Typical Thermal Resistance Junction to Case per element
(Note 1)
RqJc
1.5
K/W
Tj, TSTG
Operating and Storage Temperature Range
-60 +150
°C
Notes:
1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. IFSM and IO values shown are for entire package. For any single diode the values are one half of listed value.
DS23028 Rev. P-5
1 of 2
S9005P2CT