Datasheet > S9012

S9012

更新时间： 2024-11-06 08:55:43

品牌	Logo	应用领域
SECOS		晶体晶体管光电二极管
页数	文件大小	规格书
1页	234K
描述
General Purpose Transistor

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S9012 数据手册

S9012

PNP Silicon

Elektronische Bauelemente

General Purpose Transistor

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

SOT-23

Min

FEATURES

Collector

Dim

Max

2.800 3.040

1.200 1.400

0.890 1.110

0.370 0.500

1.780 2.040

0.013 0.100

0.085 0.177

0.450 0.600

0.890 1.020

2.100 2.500

0.450 0.600

Power dissipation

P^CM: 0.3 W

Collector Current

I^CM: - 0.5 A

Collector-base voltage

V(BR)CBO : - 40 V

Base

Emitter

Top View

Operating & storage junction temperature

T^j, Tstg : - 55 C ~ + 150 C

All Dimension in mm

ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified)

Parameter

Symbol

Test

conditions

I_E=0

MIN

-40

-25

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

(BR)CBO

Ic= -100

μ ，

Ic= -1mA I_B=0

，

(BR)CEO

(BR)EBO

I = -100

I_C=0

μ ，

I_CBO

V_CB=-40V , I_E=0

-0.1

400

Collector cut-off current

I_CEO

V_CE=-20V , I_B=0

Emitter cut-off current

I_EBO

V_EB= - 5V, I_C=0

H_FE(1)

H_FE(2)

V_CE(sat)

V_BE(sat)

VCE= -1V , IC=-50mA

V_CE= -1V , IC=-500mA

I_C= - 500mA, I_B=-50mA

I_C= - 500mA, I_B= - 50mA

120

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

-0.6

-1.2

V_CE=- 6V, IC=-20mA

MHz

Transition frequency

150

f_T

f=30MHz

CLASSIFICATION OF h_FE(1)

Rank

Range

120-200

200-350

300-400

DEVICE MARKING

http://www.SeCoSGmbH.com

17-Dec-2007 Rev.B

S9012=2T1

Any changing of specification will not be informed individual

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