5秒后页面跳转
S9012G-BP PDF预览

S9012G-BP

更新时间: 2024-11-09 19:56:11
品牌 Logo 应用领域
美微科 - MCC 晶体管
页数 文件大小 规格书
2页 228K
描述
500mA, 25V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3

S9012G-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-92
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-3针数:3
Reach Compliance Code:compliant风险等级:5.19
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):112
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

S9012G-BP 数据手册

 浏览型号S9012G-BP的Datasheet PDF文件第2页 
S9012-G  
S9012-H  
S9012-I  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
·
TO-92 Plastic-Encapsulate Transistors  
Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.  
Collector-current 0.5A  
PNP Silicon  
Transistors  
Collector-base Voltage 40V  
Operating and storage junction temperature range: -55OC to +150OC  
Marking : S9012  
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
TO-92  
·
·
A
E
Electrical Characteristics @ 25OC Unless Otherwise Specified  
B
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Collector-Base Breakdown Voltage  
40  
25  
5.0  
---  
---  
---  
---  
---  
Vdc  
Vdc  
(I =100uAdc, IE=0)  
C
Collector-Emitter Breakdown Voltage  
(I =0.1mAdc, IB=0)  
C
Emitter-Base Breakdown Voltage  
---  
Vdc  
C
(I =100uAdc, IC=0)  
E
Collector Cutoff Current  
0.1  
0.2  
0.1  
uAdc  
uAdc  
uAdc  
(VCB=40Vdc, I =0)  
E
ICEO  
Collector Cutoff Current  
(VCE=20Vdc, I =0)  
B
IEBO  
Emitter Cutoff Current  
(VEB=5.0Vdc, I =0)  
C
D
ON CHARACTERISTICS  
hFE(1)  
DC Current Gain  
64  
40  
---  
---  
---  
400  
---  
---  
---  
(I =1mAdc, VCE=4.0Vdc)  
C
hFE(2)  
DC Current Gain  
E
(I =500mAdc, VCE=1.0Vdc)  
C
E
B
B
C
VCE(sat)  
VBE(sat)  
VEB  
Collector-Emitter Saturation Voltage  
0.6  
1.2  
1.4  
Vdc  
Vdc  
Vdc  
C
(I =500mAdc, IB=50mAdc)  
STRAIGHT LEAD BENT LEAD  
BULK PACK AMMO PACK  
C
G
Base-Emitter Saturation Voltage  
(I =500mAdc, IB=50mAdc)  
C
DIMENSIONS  
Base- Emitter Voltage  
(I =100mAdc)  
E
INCHES  
MIN  
MM  
DIM  
A
B
C
D
MAX  
.185  
.185  
---  
.020  
.145  
.105  
.220  
MIN  
4.45  
4.45  
12.70  
0.41  
3.43  
2.42  
4.40  
MAX  
4.70  
4.70  
---  
0.63  
3.68  
2.67  
5.60  
NOTE  
SMALL-SIGNAL CHARACTERISTICS  
.175  
.175  
.500  
.016  
.135  
.095  
.173  
fT  
Transistor Frequency  
(I =20mAdc, VCE=6.0Vdc, f=30MHz)  
C
150  
---  
MHz  
E
CLASSIFICATION OF HFE (1)  
Straight Lead  
Bent Lead  
G
Rank  
G
H
I
Range  
112 -166  
144 -202  
190 -300  
* For ammo packing detailed specification, click here to visit our website  
of product packaging for details.  
www.mccsemi.com  
1 of 2  
Revision: C  
2012/10/15  

与S9012G-BP相关器件

型号 品牌 获取价格 描述 数据表
S9012-G-BP-HF MCC

获取价格

暂无描述
S9012G-G WEITRON

获取价格

Transistor
S9012H MCC

获取价格

500mA, 25V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3
S9012-H MCC

获取价格

PNP Silicon Transistors
S9012-H-A MCC

获取价格

Transistor
S9012-H-AP MCC

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
S9012-H-AP-HF MCC

获取价格

暂无描述
S9012-H-B MCC

获取价格

Transistor
S9012-H-BP MCC

获取价格

暂无描述
S9012H-BP MCC

获取价格

暂无描述