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S9012D PDF预览

S9012D

更新时间: 2024-11-06 19:34:23
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
2页 168K
描述
Transistor

S9012D 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.59
Base Number Matches:1

S9012D 数据手册

 浏览型号S9012D的Datasheet PDF文件第2页 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD  
TO-92 Plastic-Encapsulate Transistors  
TO-92  
S9012  
TRANSISTOR (PNP)  
FEATURES  
1. EMITTER  
z
Complementary to S9013  
Excellent hFE linearity  
2. BASE  
z
3. COLLECTOR  
MAXIMUM RATINGS (TA=25unless otherwise noted)  
1 2 3  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
-40  
Units  
V
Collector-Base Voltage  
-25  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
-5  
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
-500  
625  
mA  
mW  
PC  
TJ  
150  
Tstg  
Storage Temperature  
-55-150  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
IC= -100μA, IE=0  
IC= -1mA,IB=0  
MIN  
-40  
-25  
-5  
TYP  
MAX  
UNIT  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
V
V
IE=-100μA, IC=0  
VCB=-40V, IE=0  
-0.1  
-0.1  
-0.1  
400  
μA  
μA  
μA  
Collector cut-off current  
ICEO  
VCE=-20V, IB=0  
Emitter cut-off current  
IEBO  
VEB= -5V, IC=0  
hFE(1)  
VCE=-4V,IC=-1mA  
VCE=-1V, IC= -500mA  
IC=-500mA, IB= -50mA  
IC=-500mA, IB= -50mA  
64  
40  
DC current gain  
hFE(2)  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
VCE(sat)  
VBE(sat)  
-0.6  
-1.2  
V
V
VCE=-6V, IC= -20mA  
f=30MHz  
Transition frequency  
fT  
150  
MHz  
CLASSIFICATION OF hFE(1)  
Rank  
D
E
F
G
H
I
J
Range  
64-91  
78-112  
96-135  
112-166  
144-202  
190-300  
300-400  

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