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S9012

更新时间: 2024-11-05 19:51:35
品牌 Logo 应用领域
美微科 - MCC 光电二极管晶体管
页数 文件大小 规格书
1页 134K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC PACKAGE-3

S9012 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-W3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.69
Is Samacsys:N最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:25 V配置:SINGLE
最小直流电流增益 (hFE):40JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-W3JESD-609代码:e0
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

S9012 数据手册

  
M C C  
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TM  
S9012  
Micro Commercial Components  
Features  
·
·
·
·
·
·
TO-92 Plastic-Encapsulate Transistors  
Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.  
PNP Silicon  
Transistors  
Collector-current 0.5A  
Collector-base Voltage 40V  
Operating and storage junction temperature range: -55OC to +150OC  
Marking Code: S9012  
Pin Configuration  
TO-92  
A
E
C
B
E
Electrical Characteristics @ 25OC Unless Otherwise Specified  
B
C
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Collector-Base Breakdown Voltage  
40  
25  
5.0  
---  
---  
---  
---  
---  
Vdc  
Vdc  
(I =100uAdc, IE=0)  
C
Collector-Emitter Breakdown Voltage  
(I =0.1mAdc, IB=0)  
C
Emitter-Base Breakdown Voltage  
---  
Vdc  
(I =100uAdc, IC=0)  
E
Collector Cutoff Current  
0.1  
0.2  
0.1  
uAdc  
uAdc  
uAdc  
(VCB=40Vdc, I =0)  
E
ICEO  
Collector Cutoff Current  
(VCE=20Vdc, I =0)  
B
IEBO  
Emitter Cutoff Current  
(VEB=5.0Vdc, I =0)  
C
D
ON CHARACTERISTICS  
hFE(1)  
DC Current Gain  
64  
40  
---  
---  
---  
300  
---  
---  
---  
(I =50mAdc, VCE=1.0Vdc)  
C
hFE(2)  
DC Current Gain  
(I =500mAdc, VCE=1.0Vdc)  
C
VCE(sat)  
VBE(sat)  
VEB  
Collector-Emitter Saturation Voltage  
0.6  
1.2  
1.4  
Vdc  
Vdc  
Vdc  
(I =500mAdc, IB=50mAdc)  
C
G
Base-Emitter Saturation Voltage  
(I =500mAdc, IB=50mAdc)  
C
DIMENSIONS  
Base- Emitter Voltage  
(I =100mAdc)  
E
INCHES  
MIN  
.170  
.170  
.550  
.010  
.130  
.010  
MM  
MIN  
DIM  
A
B
C
D
MAX  
MAX  
4.83  
4.83  
14.97  
0.56  
3.96  
2.64  
NOTE  
.190  
.190  
.590  
.020  
.160  
.104  
4.33  
4.30  
13.97  
0.36  
3.30  
2.44  
SMALL-SIGNAL CHARACTERISTICS  
fT  
Transistor Frequency  
(I =20mAdc, VCE=6.0Vdc, f=30MHz)  
C
150  
---  
MHz  
E
G
CLASSIFICATION OF HFE (1)  
Rank  
G
H
I
Range  
120 -166  
144 -220  
190 -300  
www.mccsemi.com  
Revision: 3  
2004/07/26  

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