Datasheet > S9012

S9012

更新时间： 2024-11-06 08:55:43

品牌	Logo	应用领域
TGS		晶体晶体管光电二极管局域网
页数	文件大小	规格书
3页	47K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

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数据手册

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S9012 数据手册

TIGER ELECTRONIC CO.,LTD

S9012

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The S9012 is designed for use in 1W output amplifier of portable radios

in class B push-pull operation.

Features

• High total power dissipation. (PT:625mW)

• High collector current. (IC:500mA)

• Complementary to S9013

• Excellent linearity.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ........................................................................................................... -55~+150°C

Junction Temperature ................................................................................................. +150°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C).............................................................................................. 625mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage...................................................................................................... 40 V

VCEO Collector to Emitter Voltage................................................................................................... 20 V

VEBO Emitter to Base Voltage........................................................................................................... 5 V

IC Collector Current .................................................................................................................... 500 mA

Icp Base Current......................................................................................................................... 100 mA

(Ta=25°C)

Characteristics

Symbol

BVCBO

BVCEO

BVEBO

ICBO

Min.

Typ.

Max.

Unit

Test Conditions

IC=100uA, IE=0

IC=1mA, IB=0

IE=100uA, IC=0

VCE=25V, IE=0

5.0

100

0.6

1.2

0.9

300

IEBO

VEB=3V, IC=0

VCE(sat)

VBE(sat)

VBE(on)

hFE1

hFE2

Cob

IC=500mA, IB=50mA

VCE=1V, IC=10mA

VCE=1V, IC=50mA

VCE=1V, IC=500mA

VCB=10V, f=1MHz

VCE=1V, IC=10mA, f=100MHz

112

180

MHz

100

Classification on hFE1

Rank

Range

112-166

144-202

176-246

214-300

TIGER ELECTRONIC CO.,LTD

12 3

中文翻译

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与S9012相关器件

型号	品牌	获取价格	描述	数据表
S9012-A	MCC	获取价格	Transistor
S9012-AP-TP-HF	MCC	获取价格	暂无描述
S9012-BP-TP-HF	MCC	获取价格	Small Signal Bipolar Transistor,
S9012D	CJ	获取价格	Transistor
S9012D	MCC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
S9012D-BP	MCC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
S9012D-G	WEITRON	获取价格	Transistor
S9012E	WEITRON	获取价格	Transistor
S9012E	CJ	获取价格	Transistor
S9012E	MCC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,