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RQ1E100XNTR PDF预览

RQ1E100XNTR

更新时间: 2024-09-15 13:13:07
品牌 Logo 应用领域
罗姆 - ROHM 驱动
页数 文件大小 规格书
7页 1177K
描述
Power Field-Effect Transistor, 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TSMT8, 8 PIN

RQ1E100XNTR 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:16 weeks
风险等级:5.73Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):10 A最大漏源导通电阻:0.014 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-F8
JESD-609代码:e2湿度敏感等级:1
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1.5 W
最大脉冲漏极电流 (IDM):36 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Copper (Sn/Cu)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

RQ1E100XNTR 数据手册

 浏览型号RQ1E100XNTR的Datasheet PDF文件第2页浏览型号RQ1E100XNTR的Datasheet PDF文件第3页浏览型号RQ1E100XNTR的Datasheet PDF文件第4页浏览型号RQ1E100XNTR的Datasheet PDF文件第5页浏览型号RQ1E100XNTR的Datasheet PDF文件第6页浏览型号RQ1E100XNTR的Datasheet PDF文件第7页 
Data Sheet  
4V Drive Nch MOSFET  
RQ1E100XN  
Structure  
Dimensions (Unit : mm)  
Silicon N-channel MOSFET  
TSMT8  
(8) (7) (6) (5)  
Features  
1) Low on-resistance.  
(1) (2) (3) (4)  
2) Built-in G-S Protection Diode.  
3) Small Surface Mount Package (TSMT8).  
Abbreviated symbol : XS  
Application  
Switching  
Packaging specifications  
Inner circuit  
(8)  
(7)  
(6)  
(5)  
Package  
Taping  
TR  
Type  
Code  
Basic ordering unit (pieces)  
3000  
RQ1E100XN  
2  
(1) Source  
(2) Source  
(3) Source  
(4) Gate  
1  
(5) Drain  
(6) Drain  
(7) Drain  
(8) Drain  
Absolute maximum ratings (Ta = 25C)  
Parameter Symbol  
Drain-source voltage  
(1)  
(2)  
(3)  
(4)  
Limits  
30  
Unit  
V
1 ESD PROTECTION DIODE  
2 BODY DIODE  
VDSS  
VGSS  
ID  
*1  
*1  
*1  
Gate-source voltage  
20  
V
Continuous  
Pulsed  
10  
A
Drain current  
IDP  
36  
A
Continuous  
Pulsed  
IS  
1.25  
36  
A
Source current  
(Body Diode)  
*1  
*2  
ISP  
A
Power dissipation  
PD  
1.5  
W
C  
C  
Channel temperature  
Tch  
Tstg  
150  
Range of storage temperature  
*1 Pw10s, Duty cycle1%  
55 to 150  
*2 Mounted on a ceramic board.  
Thermal resistance  
Parameter  
Symbol  
Rth (ch-a)*  
Limits  
83.3  
Unit  
Channel to Ambient  
*Mounted on a ceramic board.  
C / W  
www.rohm.com  
2011.04 - Rev.A  
© 2011 ROHM Co., Ltd. All rights reserved.  
1/6  

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