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RN4988FE,LF(CT PDF预览

RN4988FE,LF(CT

更新时间: 2024-09-08 13:12:59
品牌 Logo 应用领域
东芝 - TOSHIBA PC
页数 文件大小 规格书
6页 220K
描述
Small Signal Bipolar Transistor

RN4988FE,LF(CT 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknownFactory Lead Time:12 weeks
风险等级:5.74Base Number Matches:1

RN4988FE,LF(CT 数据手册

 浏览型号RN4988FE,LF(CT的Datasheet PDF文件第2页浏览型号RN4988FE,LF(CT的Datasheet PDF文件第3页浏览型号RN4988FE,LF(CT的Datasheet PDF文件第4页浏览型号RN4988FE,LF(CT的Datasheet PDF文件第5页浏览型号RN4988FE,LF(CT的Datasheet PDF文件第6页 
RN4988  
TOSHIBA Transistor  
Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)  
RN4988  
Switching, Inverter Circuit, Interface Circuit  
Unit: mm  
And Driver Circuit Applications  
Includeing two devices in US6 (ultra super mini type with 6 leads)  
With built-in bias resistors  
Simplify circuit design  
Reduce a quantity of parts and manufacturing process  
Equivalent Circuit and Bias Resister Values  
R1: 22k  
R2: 47kΩ  
(Q1, Q2 Common)  
Q1 Maximum Ratings (Ta = 25°C)  
JEDEC  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
EIAJ  
V
50  
50  
7
V
V
TOSHIBA  
Weight: 6.8mg  
2-2J1A  
CBO  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
CEO  
EBO  
V
V
I
100  
mA  
C
Q2 Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
50  
7  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
I
100  
mA  
C
1
2001-06-07  

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