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RN2963FE PDF预览

RN2963FE

更新时间: 2024-11-06 22:19:35
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体晶体管PC
页数 文件大小 规格书
8页 559K
描述
Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)

RN2963FE 数据手册

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RN2961FE~RN2966FE  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)  
RN2961FE,RN2962FE,RN2963FE  
RN2964FE,RN2965FE,RN2966FE  
Switching, Inverter Circuit, Interface Circuit and  
Unit: mm  
Driver Circuit Applications  
Two devices are incorporated into an Extreme-Super-Mini (6-pin)  
package.  
Incorporating a bias resistor into a transistor reduces parts count.  
Reducing the parts count enables the manufacture of ever more  
compact equipment and lowers assembly cost.  
Complementary to RN1961FE~RN1966FE  
Equivalent Circuit and Bias Resistor Values  
C
Type No.  
R1 (k)  
R2 (k)  
RN2961FE  
RN2962FE  
RN2963FE  
RN2964FE  
RN2965FE  
RN2966FE  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
R1  
B
22  
47  
JEDEC  
JEITA  
E
2.2  
4.7  
TOSHIBA  
2-2N1A  
Weight: 0.003 g (typ.)  
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)  
Equivalent Circuit  
(top view)  
Characteristics  
Symbol  
Rating  
Unit  
6
5
4
Collector-base voltage  
V
V
50  
50  
V
V
CBO  
CEO  
RN2961FE~2966FE  
Collector-emitter voltage  
Emitter-base voltage  
Q2  
Q1  
1
RN2961FE~2964FE  
RN2965FE, 2966FE  
10  
V
V
EBO  
5  
Collector current  
I
100  
100  
mA  
mW  
°C  
C
2
3
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
(Note)  
C
T
RN2961FE~2966FE  
150  
j
T
stg  
55~150  
°C  
Note: Total rating  
1
2004-07-01  

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