Datasheet > RN2965CT(TE85L)

RN2965CT(TE85L)

更新时间： 2024-01-16 00:06:19

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
8页	212K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),LLCC

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

RN2965CT(TE85L) 数据手册

RN2961CT~RN2966CT

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN2961CT,RN2962CT,RN2963CT

RN2964CT,RN2965CT,RN2966CT

Switching Applications

Unit: mm

Inverter Circuit Applications

1.0±0.05

0.15±0.03

Interface Circuit Applications

Driver Circuit Applications

６

１

５

２

４

３

•

Two devices are incorporated into a fine pitch Small Mold (6 pin)

package.

0.35±0.02

0.075±0.03

0.7±0.03

Incorporating a bias resistor into a transistor reduces parts count, which

enables the manufacture of ever more compact equipment and saves

assembly cost.

•

Complementary to RN1961CT to RN1966CT

Equivalent Circuit and Bias Resistor Values

(E1)

1.EMIITTER1

2.EMITTER2

3.BASE2

4.COLLECTOR2

5.BASE1

(E2)

(B2)

(C2)

(B1)

(C1)

Type No.

R1 (kΩ)

R2 (kΩ)

CST6

6.COLLECTOR1

RN2961CT

RN2962CT

RN2963CT

RN2964CT

RN2965CT

RN2966CT

4.7

JEDEC

JEITA

―

TOSHIBA

2-1K1A

2.2

4.7

Weight: 1.0 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)

Equivalent Circuit

(top view)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

−20

CBO

CEO

RN2961CT to 2966CT

Collector-emitter voltage

Emitter-base voltage

RN2961CT to 2964CT

RN2965CT, 2966CT

−10

EBO

−5

Collector current

−50

°C

Collector power dissipation

Junction temperature

Storage temperature range

(Note1)

140

RN2961CT to 2966CT

150

stg

−55 to 150

°C

Note1: Total rating, mounted on glass-epoxy board of 10mm×10mm×1mmt.

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2009-04-17

12 3 4 5 6 7 8

中文翻译

下载PDF

与RN2965CT(TE85L)相关器件

型号	品牌	获取价格	描述	数据表
RN2965FE	TOSHIBA	获取价格	Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)
RN2965FE(TE85L)	TOSHIBA	获取价格	RN2965FE(TE85L)
RN2965FE(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR
RN2965FS	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2965FS(TPL3)	TOSHIBA	获取价格	Digital Transistors -50mA -20volts 6Pin 2.2K x 47Kohms
RN2965TE85L	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN2965TE85N	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN2965TE85R	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN2966	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN2966(TE85R)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1B, 6 PIN,

与RN2965CT(TE85L)相关文章

压敏电阻器在直流电路中的过压保护应用探讨
2024-06-07

2
电感耐压值及其与电感大小的关系
2024-06-07

5
CNY17F光耦合器：特性、应用、封装、引脚功能及替换型号解析
2024-06-07

4
DS1307资料解析：特性、引脚说明、替代推荐
2024-06-07

3

产品中心

服务支持

精选活动

关于我们

帮助中心

RN2965CT(TE85L)

RN2965CT(TE85L) 数据手册

与RN2965CT(TE85L)相关器件

与RN2965CT(TE85L)相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

RN2965CT(TE85L)

RN2965CT(TE85L) 数据手册

与RN2965CT(TE85L)相关器件

与RN2965CT(TE85L)相关文章

您还可以找

您在本页遇到什么问题？