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RN2967FE(TPL3) PDF预览

RN2967FE(TPL3)

更新时间: 2024-02-26 07:36:48
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体管
页数 文件大小 规格书
6页 353K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR

RN2967FE(TPL3) 技术参数

是否Rohs认证: 不符合生命周期:Lifetime Buy
包装说明:,Reach Compliance Code:unknown
风险等级:5.88最大集电极电流 (IC):0.1 A
最小直流电流增益 (hFE):80元件数量:2
极性/信道类型:PNP最大功率耗散 (Abs):0.1 W
子类别:BIP General Purpose Small Signal表面贴装:YES
晶体管元件材料:SILICONBase Number Matches:1

RN2967FE(TPL3) 数据手册

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RN2967FE~RN2969FE  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)  
RN2967FE,RN2968FE,RN2969FE  
Switching, Inverter Circuit, Interface Circuit and  
Unit: mm  
Driver Circuit Applications  
Two devices are incorporated into an Extreme-Super-Mini (6-pin)  
package.  
Incorporating a bias resistor into a transistor reduces parts count.  
Reducing the parts count enables the manufacture of ever more  
compact equipment and lowers assembly cost.  
Complementary to RN1967FE~RN1969FE  
Equivalent Circuit and Bias Resistor Values  
C
Type No.  
R1 (kΩ)  
R2 (kΩ)  
RN2967FE  
RN2968FE  
RN2969FE  
10  
22  
47  
47  
47  
22  
R1  
B
JEDEC  
E
JEITA  
TOSHIBA  
2-2N1A  
Absolute Maximum Ratings (Ta = 25°C)  
(Q1, Q2 common)  
Weight: 3 mg (typ.)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
50  
Unit  
V
Equivalent Circuit  
(top view)  
V
V
CBO  
CEO  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
50  
V
RN2967FE  
RN2968FE  
RN2969FE  
6  
6
5
4
V
C
V
7  
EBO  
15  
Q2  
Q1  
I
100  
100  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
P
(Note 1)  
T
j
150  
1
2
3
Storage temperature range  
T
55~150  
°C  
stg  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature,  
etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba  
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating  
Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Total rating  
1
2011-01-19  

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