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RN2966CT PDF预览

RN2966CT

更新时间： 2024-02-03 03:43:19
品牌 Logo 应用领域
东芝 - TOSHIBA 驱动器开关
页数 文件大小 规格书
8页 219K
描述
Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

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中文翻译

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RN2966CT 技术参数

生命周期：Lifetime Buy包装说明：SMALL OUTLINE, R-PDSO-F6
针数：6Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：5.49最大集电极电流 (IC)：0.05 A
集电极-发射极最大电压：20 V配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：120JESD-30 代码：R-PDSO-F6
JESD-609代码：e0元件数量：2
端子数量：6最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：PNP
最大功率耗散 (Abs)：0.05 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：YES
端子面层：TIN LEAD端子形式：FLAT
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

RN2966CT 数据手册

 浏览型号RN2966CT的Datasheet PDF文件第2页浏览型号RN2966CT的Datasheet PDF文件第3页浏览型号RN2966CT的Datasheet PDF文件第4页浏览型号RN2966CT的Datasheet PDF文件第5页浏览型号RN2966CT的Datasheet PDF文件第6页浏览型号RN2966CT的Datasheet PDF文件第7页 
RN2961CT~RN2966CT  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)  
RN2961CT,RN2962CT,RN2963CT  
RN2964CT,RN2965CT,RN2966CT  
Switching Applications  
Unit: mm  
Inverter Circuit Applications  
1.0±0.05  
0.15±0.03  
Interface Circuit Applications  
Driver Circuit Applications  
６
１
５
２
４
３
•
•
Two devices are incorporated into a fine pitch Small Mold (6 pin)  
package.  
0.35±0.02  
0.35±0.02  
0.075±0.03  
0.7±0.03  
Incorporating a bias resistor into a transistor reduces parts count, which  
enables the manufacture of ever more compact equipment and saves  
assembly cost.  
•
Complementary to RN1961CT to RN1966CT  
Equivalent Circuit and Bias Resistor Values  
(E1)  
1.EMIITTER1  
2.EMITTER2  
3.BASE2  
4.COLLECTOR2  
5.BASE1  
(E2)  
(B2)  
(C2)  
(B1)  
(C1)  
C
Type No.  
R1 (kΩ)  
R2 (kΩ)  
CST6  
6.COLLECTOR1  
RN2961CT  
RN2962CT  
RN2963CT  
RN2964CT  
RN2965CT  
RN2966CT  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
R1  
B
JEDEC  
JEITA  
―
―
22  
47  
TOSHIBA  
2-1K1A  
E
2.2  
4.7  
Weight: 1.0 mg (typ.)  
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)  
Equivalent Circuit  
(top view)  
Characteristics  
Symbol  
Rating  
Unit  
6
5
4
Collector-base voltage  
V
V
−20  
−20  
V
V
CBO  
CEO  
RN2961CT to 2966CT  
Collector-emitter voltage  
Emitter-base voltage  
Q2  
Q1  
RN2961CT to 2964CT  
RN2965CT, 2966CT  
−10  
V
V
EBO  
−5  
1
2
3
Collector current  
I
−50  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
(Note1)  
140  
C
RN2961CT to 2966CT  
T
150  
j
T
stg  
−55 to 150  
°C  
Note1: Total rating, mounted on glass-epoxy board of 10mm×10mm×1mmt.  
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2009-04-17  
12345678

中文翻译

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